Development of low-stress SiC coating on single crystal Si using low elastic modulus SiOC amorphous buffer layer

doi:10.1016/j.jnoncrysol.2024.122908

IMR OpenIR

	Development of low-stress SiC coating on single crystal Si using low elastic modulus SiOC amorphous buffer layer
	Jing, Weichen 1,2; Tariq, Naeem ul Haq 3; Wang, Junchao 1,4; Hou, Wenkang 1,2; Xiong, Tianying 2; Tang, Mingqiang 2
通讯作者	Tang, Mingqiang(mqtang@imr.ac.cn)
	2024-05-01
发表期刊	JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN	0022-3093
卷号	631 页码:8
摘要	In this study, we successfully prepared low-stress SiC coatings on single-crystal Si substrates using the organometallic chemical vapor deposition (MOCVD) technique. For this purpose, the SiOC buffer layer (with low hardness and low elastic modulus) was initially deposited on the substrate and then the SiC coating was directly deposited on the buffer layer. A series of both, the buffer layer and the SiC coating, were separately deposited at various process conditions to pinpoint their optimized combination. Results revealed that the residual compressive stress value for the optimized SiC composite coating (containing low elastic modulus SiOC buffer layer) was 87.9% lower than that of the single SiC layer. The findings of this study are of great significance for the production and integration of the SiOC buffer layer and the SiC coating which not only improves the production efficiency but also reduces the production costs low-cost power devices.
关键词	SiC coating SiOC buffer layer MOCVD Residual stress Mechanical property
资助者	National Key Research and Devel- opment Project
DOI	10.1016/j.jnoncrysol.2024.122908
收录类别	SCI
语种	英语
资助项目	National Key Research and Devel- opment Project[2019YFB2005302]
WOS研究方向	Materials Science
WOS类目	Materials Science, Ceramics ; Materials Science, Multidisciplinary
WOS记录号	WOS:001203047200001
出版者	ELSEVIER
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/185523
专题	中国科学院金属研究所
通讯作者	Tang, Mingqiang
作者单位	1.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shi changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China 3.Pakistan Inst Engn & Appl Sci, Dept Met & Mat Engn, Islamabad 45650, Pakistan 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Jing, Weichen,Tariq, Naeem ul Haq,Wang, Junchao,et al. Development of low-stress SiC coating on single crystal Si using low elastic modulus SiOC amorphous buffer layer[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS,2024,631:8.
APA	Jing, Weichen,Tariq, Naeem ul Haq,Wang, Junchao,Hou, Wenkang,Xiong, Tianying,&Tang, Mingqiang.(2024).Development of low-stress SiC coating on single crystal Si using low elastic modulus SiOC amorphous buffer layer.JOURNAL OF NON-CRYSTALLINE SOLIDS,631,8.
MLA	Jing, Weichen,et al."Development of low-stress SiC coating on single crystal Si using low elastic modulus SiOC amorphous buffer layer".JOURNAL OF NON-CRYSTALLINE SOLIDS 631(2024):8.