Enhanced thermoelectric performance of Mg<sub>3</sub>Sb<sub>2-x</sub>Bix thermoelectric thin films through carrier concentration modulation by Bi alloying

doi:10.1016/j.jallcom.2024.174028

IMR OpenIR

	Enhanced thermoelectric performance of Mg₃Sb_2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying
	Ran, Yijun 1,2; Ma, Wenxue 3,4; Yu, Hailong 1,2; Li, Wenxia 1,2; Zhou, Dayi 1,2; Wang, Fei 5; Gao, Ning 3,4; Yu, Zhi 1,2; Tai, Kaiping 1,2,6,7
通讯作者	Yu, Zhi(zyu@imr.ac.cn) ; Tai, Kaiping(kptai@imr.ac.cn)
	2024-05-25
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	985 页码:10
摘要	Mg3Sb2-based alloys exhibit promising characteristics as thermoelectric materials owing to their non-toxicity, low cost, abundance of earth constituent elements, and high thermoelectric performance. However, the thermoelectric performance of Mg3Sb2-based films remains challenging due to their inherently low carrier concentration. To address this challenge, this work focuses on elevating the carrier concentration of Mg3Sb2-xBix films via alloying Bi in Mg3Sb2. The results demonstrate that the incorporation of the Bi element successfully increases the carrier concentration of Mg3Sb2-xBix (x=0, 0.5, 1.5, and 2) films from 10(16) cm(-3) (x=0) to 10(20) cm(-3) (x=2). Furthermore, the introduction of Bi in Mg3Sb2-xBix films suppresses the phonon transport by enhancing boundary scattering of phonon, leading to a decrease in thermal conductivity. Ultimately, the synergistic optimization drives the peak ZT value to 0.27 for x=1.5 in Mg3Sb2-xBix at 525 K, which is more than seven times higher compared to the Mg3Sb2 thin film (ZT similar to 0.035 at 525 K). This work has improved the thermoelectric properties of Mg3Sb2-based films, making an essential contribution to the advancement of Mg3Sb2-based film materials in the field of Micro-thermoelectric devices
关键词	Mg3Sb2-xBix thin film Magnetron sputtering Carrier concentration Thermoelectric performance
资助者	technology plan project ; Shenyang science and tech-nology plan project ; Science Fund for Distinguished Young Scholars of Liaoning Province
DOI	10.1016/j.jallcom.2024.174028
收录类别	SCI
语种	英语
资助项目	technology plan project[2022-MS-011] ; Shenyang science and tech-nology plan project[23-407-3-23] ; Science Fund for Distinguished Young Scholars of Liaoning Province[2023JH6/100500004]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001224788000001
出版者	ELSEVIER SCIENCE SA
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/186254
专题	中国科学院金属研究所
通讯作者	Yu, Zhi; Tai, Kaiping
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Shandong Univ, Inst Frontier & Interdisciplinary Sci, Qingdao 266237, Peoples R China 4.Shandong Univ, Key Lab Particle Phys & Particle Irradiat, MOE, Qingdao 266237, Peoples R China 5.Xian Res Inst High Tech, Xian 710025, Peoples R China 6.Liaoning Lengxin Semicond Technol Co Ltd, Shenyang 110016, Peoples R China 7.Liaoning Profess Technol Innovat Ctr Integrated Ci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Ran, Yijun,Ma, Wenxue,Yu, Hailong,et al. Enhanced thermoelectric performance of Mg₃Sb_2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2024,985:10.
APA	Ran, Yijun.,Ma, Wenxue.,Yu, Hailong.,Li, Wenxia.,Zhou, Dayi.,...&Tai, Kaiping.(2024).Enhanced thermoelectric performance of Mg₃Sb_2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying.JOURNAL OF ALLOYS AND COMPOUNDS,985,10.
MLA	Ran, Yijun,et al."Enhanced thermoelectric performance of Mg₃Sb_2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying".JOURNAL OF ALLOYS AND COMPOUNDS 985(2024):10.