Electrically tunable Γ -Q interlayer excitons in twisted MoSe<sub>2 </sub>bilayers

doi:10.1016/j.jmst.2024.04.029

IMR OpenIR

	Electrically tunable Γ -Q interlayer excitons in twisted MoSe₂bilayers
	Huang, Jinqiang 1,2; Xiong, Zhiren 3,4; He, Jinkun 3,4; Wu, Xingguang 3,4; Watanabe, Kenji 5; Taniguchi, Takashi 6; Lai, Shen 7; Zhang, Tongyao 3,4,8; Han, Zheng Vitto 3,4,8,9; Zhao, Siwen 8
通讯作者	Zhang, Tongyao(tongyao_zhang@sxu.edu.cn) ; Han, Zheng Vitto(vitto.han@gmail.com) ; Zhao, Siwen(siwenzhao0126@gmail.com)
	2025-02-01
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	207 页码:70-75
摘要	Twist, the very degree of freedom in van der Waals heterostructures, offers a compelling avenue to manipulate and tailor their electrical and optical characteristics. In particular, moir & eacute; patterns in twisted homobilayer transition metal dichalcogenides (TMDs) lead to zone folding and miniband formation in the resulting electronic bands, holding the promise to exhibit inter-layer excitonic optical phenomena. Although some experiments have shown the existence of twist-angle-dependent intra- and inter-layer excitons in twisted MoSe2 homobilayers, electrical control of the interlayer excitons in MoSe2 is relatively under-explored. Here, we show the signatures of the moir & eacute; effect on intralayer and interlayer excitons in 2H-stacked twisted MoSe2 homobilayers. Doping- and electric field-dependent photoluminescence measurements at low temperatures give evidence of the momentum-direct K-K intralayer excitons, and the momentum-indirect r-K and r-Q interlayer excitons. Our results suggest that twisted MoSe2 homobilayers are an intriguing platform for engineering interlayer exciton states, which may shed light on future atomically thin optoelectronic applications. (c) 2024 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	Interlayer excitons Intralayer excitons Twisted bilayer TMDs Momentum indirect excitons
资助者	National Key R&D Program of China ; National Natural Science Foundation of China ; China Postdoctoral Science Foundation ; Fund for Shanxi 1331 Project Key Subjects Construction ; Innovation Program for Quantum Science and Technology ; JSPS KAKENHI ; World Premier International Research Center Initiative (WPI), MEXT, Japan
DOI	10.1016/j.jmst.2024.04.029
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2023YFF1500600] ; National Natural Science Foundation of China[12004259] ; National Natural Science Foundation of China[12204287] ; China Postdoctoral Science Foundation[2022M723215] ; Fund for Shanxi 1331 Project Key Subjects Construction ; Innovation Program for Quantum Science and Technology[2021ZD0302003] ; JSPS KAKENHI[20H00354] ; JSPS KAKENHI[23H02052] ; World Premier International Research Center Initiative (WPI), MEXT, Japan
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001245321600001
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/187007
专题	中国科学院金属研究所
通讯作者	Zhang, Tongyao; Han, Zheng Vitto; Zhao, Siwen
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 4.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China 5.Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan 6.Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan 7.Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 999078, Macau, Peoples R China 8.Liaoning Acad Mat, Shenyang, Peoples R China 9.Hefei Natl Lab, Hefei 230088, Peoples R China
推荐引用方式 GB/T 7714	Huang, Jinqiang,Xiong, Zhiren,He, Jinkun,et al. Electrically tunable Γ -Q interlayer excitons in twisted MoSe₂bilayers[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2025,207:70-75.
APA	Huang, Jinqiang.,Xiong, Zhiren.,He, Jinkun.,Wu, Xingguang.,Watanabe, Kenji.,...&Zhao, Siwen.(2025).Electrically tunable Γ -Q interlayer excitons in twisted MoSe₂bilayers.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,207,70-75.
MLA	Huang, Jinqiang,et al."Electrically tunable Γ -Q interlayer excitons in twisted MoSe₂bilayers".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 207(2025):70-75.