Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study

doi:10.1016/j.scib.2024.03.017

IMR OpenIR

	Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study
	Qu, Hengze 1; Zhang, Shengli 1; Cao, Jiang 2; Wu, Zhenhua 3; Chai, Yang 4; Li, Weisheng 5; Li, Lain-Jong 6; Ren, Wencai 7; Wang, Xinran 5,8,9; Zeng, Haibo 1
通讯作者	Zhang, Shengli(zhangslvip@njust.edu.cn) ; Zeng, Haibo(zeng.haibo@njust.edu.cn)
	2024-05-30
发表期刊	SCIENCE BULLETIN
ISSN	2095-9273
卷号	69 期号:10 页码:1427-1436
摘要	Developing low-power FETs holds significant importance in advancing logic circuits, especially as the feature size of MOSFETs approaches sub-10 nanometers. However, this has been restricted by the thermionic limitation of SS , which is limited to 60 mV per decade at room temperature. Herein, we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in MOSFETs. Through high-throughput calculations, we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport potential. This guides us to screen 192 candidates from the 2D material database comprising 1608 systems. Additionally, the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed, which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 V. This work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs. (c) 2024 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
关键词	2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations
资助者	Postgraduate Research & Practice Innovation Program of Jiangsu Province ; Training Program of the Major Research Plan of the National Natural Science Foundation of China ; Natural Science Foundation of Jiangsu Province ; Fundamental Research Funds for the Central Universities ; Qing Lan Project of Jiangsu Province ; Six Talent Peaks Project of Jiangsu Province ; Research Grant Council of Hong Kong
DOI	10.1016/j.scib.2024.03.017
收录类别	SCI
语种	英语
资助项目	Postgraduate Research & Practice Innovation Program of Jiangsu Province[KYCX22_0428] ; Training Program of the Major Research Plan of the National Natural Science Foundation of China[91964103] ; Natural Science Foundation of Jiangsu Province[BK20180071] ; Fundamental Research Funds for the Central Universities[30919011109] ; Qing Lan Project of Jiangsu Province ; Six Talent Peaks Project of Jiangsu Province[XCL-035] ; Research Grant Council of Hong Kong[CRS_PolyU502/22]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:001245868100001
出版者	ELSEVIER
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/187010
专题	中国科学院金属研究所
通讯作者	Zhang, Shengli; Zeng, Haibo
作者单位	1.Nanjing Univ Sci & Technol, Coll Mat Sci & Engn, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Peoples R China 2.Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing 210094, Peoples R China 3.Chinese Acad Sci, Key Lab Microelect Device & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China 4.Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Peoples R China 5.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210023, Peoples R China 6.Univ Hong Kong, Dept Mech Engn, Hong Kong 999077, Peoples R China 7.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 8.Nanjing Univ, Sch Integrated Circuits, Suzhou 215163, Peoples R China 9.Suzhou Lab, Suzhou 215009, Peoples R China
推荐引用方式 GB/T 7714	Qu, Hengze,Zhang, Shengli,Cao, Jiang,et al. Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study[J]. SCIENCE BULLETIN,2024,69(10):1427-1436.
APA	Qu, Hengze.,Zhang, Shengli.,Cao, Jiang.,Wu, Zhenhua.,Chai, Yang.,...&Zeng, Haibo.(2024).Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study.SCIENCE BULLETIN,69(10),1427-1436.
MLA	Qu, Hengze,et al."Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study".SCIENCE BULLETIN 69.10(2024):1427-1436.