| Improvement of memristive switching of Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3 heterostructures via La doping | |
| Yue, Zhi Yun1,2; Lin, Jun Liang4; Bai, Yu3; Zhang, Zhi Dong1,2; Wang, Zhan Jie3 | |
| 通讯作者 | Wang, Zhan Jie(wangzj@imr.ac.cn) |
| 2023-12-01 | |
| 发表期刊 | VACUUM
 |
| ISSN | 0042-207X |
| 卷号 | 218页码:11 |
| 摘要 | The ferroelectric memory with superior stability and high operating speed has broad development prospects in areas such as neural computing and information storage. An effective strategy to improve the performance of the resistive switching (RS) of the ferroelectric memory is to improve the conductivity of ferroelectric thin films while maintaining their ferroelectric properties, because there is a competition between ferroelectric properties and conductivity in the RS behavior. Herein, we prepared La-doped Pb(Zr0.52Ti0.48)O-3 (PLZT) thin films on the Nb:SrTiO3 (NSTO) substrate. By controlling La concentration, a compromise between ferroelectricity and conductivity was achieved. The RS on/off ratio reached 2.6 x 10(4) doped with 2 mol% La. Moreover, the conduction mechanism changes from the Schottky emission controlling PZT/NSTO interface to the coexistence of Schottky emission and space charge-limited mechanism in the PLZT/NSTO heterostructures. The results reveal that the effective matching of the ferroelectricity and conductivity of ferroelectric thin films is necessary for obtaining high RS on/off ratio, which is helpful to the accurate design of high-performance ferroelectric memory devices. |
| 关键词 | La-doped PZT Ferroelectric heterostructures Resistive switching behavior Ferroelectric polarization Oxygen vacancies |
| 资助者 | National Natural Science Foundation of China ; National Basic Research Program of China |
| DOI | 10.1016/j.vacuum.2023.112576 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[51902210] ; National Basic Research Program of China[2017YFA0206302] |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| WOS记录号 | WOS:001255443600001 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/187684 |
| 专题 | 中国科学院金属研究所 |
| 通讯作者 | Wang, Zhan Jie |
| 作者单位 | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Peoples R China 4.Liaoning Univ, Coll Light Ind, Shenyang 110036, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yue, Zhi Yun,Lin, Jun Liang,Bai, Yu,et al. Improvement of memristive switching of Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3 heterostructures via La doping[J]. VACUUM,2023,218:11. |
| APA | Yue, Zhi Yun,Lin, Jun Liang,Bai, Yu,Zhang, Zhi Dong,&Wang, Zhan Jie.(2023).Improvement of memristive switching of Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3 heterostructures via La doping.VACUUM,218,11. |
| MLA | Yue, Zhi Yun,et al."Improvement of memristive switching of Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3 heterostructures via La doping".VACUUM 218(2023):11. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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