Stress-induced intersecting stacking faults and shear antiphase boundary in Zr5Ge4 second phase precipitate embedded in Ge-modified Zircaloy-4

doi:10.1016/j.jallcom.2024.175196

IMR OpenIR

	Stress-induced intersecting stacking faults and shear antiphase boundary in Zr5Ge4 second phase precipitate embedded in Ge-modified Zircaloy-4
	Ali, Muhammad 1,2; Han, Fuzhou 1,2; Guo, Wenbin 1,2; Ren, Jie 1,2; Hu, Jianan 1,2; Wang, Qichen 1,2; Zhang, Yingdong 1,2; Yuan, Fusen 1,2; Li, Geping 2
通讯作者	Han, Fuzhou(fzhan16s@imr.ac.cn) ; Li, Geping(gpli@imr.ac.cn)
	2024-10-05
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	1001 页码:9
摘要	Secondary phase precipitates are vital to control mechanical, corrosion and irradiation response of the multiphase alloy systems. This work reports the mechanical response of an ordered complex intermetallic Zr5Ge4 precipitate during hot working of the experimental Zircaloy-4 modified with dilute Ge addition. Atomic scale insight is provided into the formation mechanism of straight and circular stacking faults and shear antiphase boundary in Zr5Ge4 precipitate. Two types of stacking faults, having displacement vectors 1/3[100] and 1/3 [110] with small components along the c-axis, come across and form a distinct region on the (001) surface composed of a zigzag atomic arrangement different from the parent crystal. Besides this, a shear antiphase boundary along the Zr5Ge4/fcc-Zr interface is analysed and concomitant generation of nanotwins is evidenced by the streaking effect in the associated fast Fourier transform (FFT) pattern. By analysing the distortion and stacking faults in the surrounding fcc-Zr phase, comments are made on the role of external stresses in generating the aforementioned planar defects. The relative activity of two types of displacement vectors observed in Zr5Ge4 precipitate is discussed on the basis of the nature of the atomic bond.
关键词	Modified Zircaloy-4 Stacking faults Antiphase boundary Transmission electron microscopy Zr 5 Ge 4 second phase precipitate
资助者	CAS-TWAS President Fellowship ; Special Research Assistant Project of the Chinese Academy of Sciences
DOI	10.1016/j.jallcom.2024.175196
收录类别	SCI
语种	英语
资助项目	CAS-TWAS President Fellowship ; Special Research Assistant Project of the Chinese Academy of Sciences[E355A201]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001258529500001
出版者	ELSEVIER SCIENCE SA
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/187822
专题	中国科学院金属研究所
通讯作者	Han, Fuzhou; Li, Geping
作者单位	1.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shi Changxu Innovat Ctr Adv Mat, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Ali, Muhammad,Han, Fuzhou,Guo, Wenbin,et al. Stress-induced intersecting stacking faults and shear antiphase boundary in Zr5Ge4 second phase precipitate embedded in Ge-modified Zircaloy-4[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2024,1001:9.
APA	Ali, Muhammad.,Han, Fuzhou.,Guo, Wenbin.,Ren, Jie.,Hu, Jianan.,...&Li, Geping.(2024).Stress-induced intersecting stacking faults and shear antiphase boundary in Zr5Ge4 second phase precipitate embedded in Ge-modified Zircaloy-4.JOURNAL OF ALLOYS AND COMPOUNDS,1001,9.
MLA	Ali, Muhammad,et al."Stress-induced intersecting stacking faults and shear antiphase boundary in Zr5Ge4 second phase precipitate embedded in Ge-modified Zircaloy-4".JOURNAL OF ALLOYS AND COMPOUNDS 1001(2024):9.