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Electrically tunable non-radiative lifetime in WS2/WSe2 heterostructures
Wang, Anran1; Wu, Xingguang2; Zhao, Siwen2; Han, Zheng Vitto3; Shi, Yi1; Cerullo, Giulio4,5; Wang, Fengqiu1
通讯作者Wang, Fengqiu(fwang@nju.edu.cn)
2024-07-18
发表期刊NANOSCALE
ISSN2040-3364
卷号16期号:28页码:13687-13693
摘要Van der Waals heterostructures based on transition metal dichalcogenides (TMDs) have emerged as excellent candidates for next-generation optoelectronics and valleytronics, due to their fascinating physical properties. The understanding and active control of the relaxation dynamics of heterostructures play a crucial role in device design and optimization. Here, we investigate the back-gate modulation of exciton dynamics in a WS2/WSe2 heterostructure by combining time-resolved photoluminescence (TRPL) and transient absorption spectroscopy (TAS) at cryogenic temperatures. We find that the non-radiative relaxation lifetimes of photocarriers in heterostructures can be electrically controlled for samples with different twist-angles, whereas such lifetime tuning is not present in standalone monolayers. We attribute such an observation to doping-controlled competition between interlayer and intralayer recombination pathways in high-quality WS2/WSe2 samples. The simultaneous measurement of TRPL and TAS lifetimes within the same sample provides additional insight into the influence of coexisting excitons and background carriers on the photo-response, and points to the potential of tailoring light-matter interactions in TMD heterostructures.
资助者National Key Research and Development Program of China
DOI10.1039/d4nr01982b
收录类别SCI
语种英语
资助项目National Key Research and Development Program of China[2022YFA1204303]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:001263206500001
出版者ROYAL SOC CHEMISTRY
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/188098
专题中国科学院金属研究所
通讯作者Wang, Fengqiu
作者单位1.Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
4.Politecn Milan, Dipartimento Fis, Piazza Leonardo Vinci 32, I-20133 Milan, Italy
5.CNR, Ist Foton & Nanotecnol IFN, Piazza Leonardo Vinci 32, I-20133 Milan, Italy
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Wang, Anran,Wu, Xingguang,Zhao, Siwen,et al. Electrically tunable non-radiative lifetime in WS2/WSe2 heterostructures[J]. NANOSCALE,2024,16(28):13687-13693.
APA Wang, Anran.,Wu, Xingguang.,Zhao, Siwen.,Han, Zheng Vitto.,Shi, Yi.,...&Wang, Fengqiu.(2024).Electrically tunable non-radiative lifetime in WS2/WSe2 heterostructures.NANOSCALE,16(28),13687-13693.
MLA Wang, Anran,et al."Electrically tunable non-radiative lifetime in WS2/WSe2 heterostructures".NANOSCALE 16.28(2024):13687-13693.
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