Unusually high thermal conductivity in suspended monolayer MoSi<sub>2</sub>N<sub>4</sub>

doi:10.1038/s41467-024-48888-9

IMR OpenIR

	Unusually high thermal conductivity in suspended monolayer MoSi₂N₄
	He, Chengjian 1,2; Xu, Chuan 1,2; Chen, Chen 1,2; Tong, Jinmeng 1,2; Zhou, Tianya 1,2; Sun, Su 1,2; Liu, Zhibo 1,2; Cheng, Hui-Ming 1,2,3; Ren, Wencai 1,2
通讯作者	Ren, Wencai(wcren@imr.ac.cn)
	2024-06-06
发表期刊	NATURE COMMUNICATIONS
卷号	15 期号:1 页码:11
摘要	Two-dimensional semiconductors with high thermal conductivity and charge carrier mobility are of great importance for next-generation electronic and optoelectronic devices. However, constrained by the long-held Slack's criteria, the reported two-dimensional semiconductors such as monolayers of MoS2, WS2, MoSe2, WSe2 and black phosphorus suffer from much lower thermal conductivity than silicon (similar to 142 W.m(-1).K-1) because of the complex crystal structure, large average atomic mass and relatively weak chemical bonds. Despite the more complex crystal structure, the recently emerging monolayer MoSi2N4 semiconductor has been predicted to have high thermal conductivity and charge carrier mobility simultaneously. In this work, using a noncontact optothermal Raman technique, we experimentally measure a high thermal conductivity of similar to 173 W.m(-1).K-1 at room temperature for suspended monolayer MoSi2N4 grown by chemical vapor deposition. First-principles calculations reveal that such unusually high thermal conductivity benefits from the high Debye temperature and small Greisen parameter of MoSi2N4, both of which are strongly dependent on the high Young's modulus induced by the outmost Si-N bilayers. Our study not only establishes monolayer MoSi2N4 as a benchmark 2D semiconductor for next-generation electronic and optoelectronic devices, but also provides an insight into the design of 2D materials for efficient heat conduction.
资助者	National Natural Science Foundation of China (National Science Foundation of China) ; National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; LiaoNing Revitalization Talents Program ; Institute of Metal Research, Chinese Academy of Sciences
DOI	10.1038/s41467-024-48888-9
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (National Science Foundation of China)[52188101] ; National Natural Science Foundation of China (National Science Foundation of China)[52122202] ; National Natural Science Foundation of China[ZDBS-LY-JSC027] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[XLYC2201003] ; LiaoNing Revitalization Talents Program[2019000178] ; Institute of Metal Research, Chinese Academy of Sciences
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:001240998200003
出版者	NATURE PORTFOLIO
引用统计	被引频次：15[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/188309
专题	中国科学院金属研究所
通讯作者	Ren, Wencai
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	He, Chengjian,Xu, Chuan,Chen, Chen,et al. Unusually high thermal conductivity in suspended monolayer MoSi₂N₄[J]. NATURE COMMUNICATIONS,2024,15(1):11.
APA	He, Chengjian.,Xu, Chuan.,Chen, Chen.,Tong, Jinmeng.,Zhou, Tianya.,...&Ren, Wencai.(2024).Unusually high thermal conductivity in suspended monolayer MoSi₂N₄.NATURE COMMUNICATIONS,15(1),11.
MLA	He, Chengjian,et al."Unusually high thermal conductivity in suspended monolayer MoSi₂N₄".NATURE COMMUNICATIONS 15.1(2024):11.