Investigations on the crystallographic stacking disordering and properties of novel Ga-containing in-plane chemically ordered (Cr2/3R1/3)2GaC (R=Y, Tb- Lu)<i> i</i>-MAX phases

doi:10.1016/j.actamat.2024.120213

IMR OpenIR

	Investigations on the crystallographic stacking disordering and properties of novel Ga-containing in-plane chemically ordered (Cr2/3R1/3)2GaC (R=Y, Tb- Lu) i-MAX phases
	Chong, He 1; Wang, Chaobo 2; Guo, Hongyun 1; Sun, Shuli 1; Gong, Weijiang 2; Fu, Xiaoxiao 3; Huang, Xiaoxu 3; Ma, Shangyi 4; Liu, Gang 4; Wang, Qiang 1; Cui, Weibin 1,5
通讯作者	Fu, Xiaoxiao(xiaoxiao.fu@cqu.edu.cn) ; Ma, Shangyi(shyma@imr.ac.cn) ; Cui, Weibin(cuiweibin@epm.neu.edu.cn)
	2024-09-15
发表期刊	ACTA MATERIALIA
ISSN	1359-6454
卷号	277 页码:10
摘要	Eight novel transition metal carbides, nanolaminated (Cr2/3R1/3)2GaC (R=Y, Tb, Dy, Ho, Er, Tm, Yb and Lu) with R in-plane chemical ordered occupation, have been synthesized with mainly Cmcm orthorhombic structure and monotonously decreased lattice parameters due to lanthanide contraction. Stacking disorderings and highdensity slidings within c plane have been observed. Two characteristic in-plane sliding, along [100] or [130]o directions have been analyzed with former one leading into the structural evolution between Cmcm and C2/c symmetry. Such an atomic scale co-existence of Cmcm and C2/c structures is explained by more negative charge for Ga and anisotropic bonding with Ga compared with A=Al case. Thus, the Vickers hardness, fracture strength and increased wear depth are reduced in representative (Cr2/3Lu1/3)2GaC i-MAX bulk compared with the (Cr2/ 3Lu1/3)2AlC counterpart.
关键词	i-MAX phase Rare-earth High-density sliding Mechanical properties
资助者	National Key Research and Development Program of China ; National Youth Talent Support Program ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities ; Shenyang National Laboratory for Materials Science ; State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals ; Shenyang Municipal Jiebang-Guashuai Program
DOI	10.1016/j.actamat.2024.120213
收录类别	SCI
语种	英语
资助项目	National Key Research and Development Program of China[2021YFB3702101] ; National Youth Talent Support Program[QNBJ-2022-03] ; National Natural Science Foundation of China[51971056] ; National Natural Science Foundation of China[52371180] ; Fundamental Research Funds for the Central Universities[N2209005] ; Fundamental Research Funds for the Central Universities[N2309001] ; Shenyang National Laboratory for Materials Science ; State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals[18LHPY014] ; Shenyang Municipal Jiebang-Guashuai Program[22-316-1-02]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001285861000001
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/188879
专题	中国科学院金属研究所
通讯作者	Fu, Xiaoxiao; Ma, Shangyi; Cui, Weibin
作者单位	1.Northeastern Univ, Key Lab Electromagnet Proc Mat, Minist Educ, Shenyang 110819, Peoples R China 2.Northeastern Univ, Coll Sci, Shenyang 110819, Peoples R China 3.Chongqing Univ, Coll Mat Sci & Engn, Int Joint Lab Light Alloys MOE, Chongqing 400044, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 5.Northeastern Univ, Sch Mat Sci & Engn, Dept Mat Phys & Chem, Shenyang 110819, Peoples R China
推荐引用方式 GB/T 7714	Chong, He,Wang, Chaobo,Guo, Hongyun,et al. Investigations on the crystallographic stacking disordering and properties of novel Ga-containing in-plane chemically ordered (Cr2/3R1/3)2GaC (R=Y, Tb- Lu) i-MAX phases[J]. ACTA MATERIALIA,2024,277:10.
APA	Chong, He.,Wang, Chaobo.,Guo, Hongyun.,Sun, Shuli.,Gong, Weijiang.,...&Cui, Weibin.(2024).Investigations on the crystallographic stacking disordering and properties of novel Ga-containing in-plane chemically ordered (Cr2/3R1/3)2GaC (R=Y, Tb- Lu) i-MAX phases.ACTA MATERIALIA,277,10.
MLA	Chong, He,et al."Investigations on the crystallographic stacking disordering and properties of novel Ga-containing in-plane chemically ordered (Cr2/3R1/3)2GaC (R=Y, Tb- Lu) i-MAX phases".ACTA MATERIALIA 277(2024):10.