Diamond photo-electric detectors with introduced silicon-vacancy color centers

doi:10.1039/d4tc02335h

IMR OpenIR

	Diamond photo-electric detectors with introduced silicon-vacancy color centers
	Guo, Xiaokun 1,2; Yang, Bing 1,2; Zhang, Xinglai 1,2; Lu, Jiaqi 1,2; Huang, Ming 1,3; Huang, Nan 1,2; Liu, Lusheng 1,2; Jiang, Xin 4
通讯作者	Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xin.jiang@uni-siegen.de)
	2024-08-07
发表期刊	JOURNAL OF MATERIALS CHEMISTRY C
ISSN	2050-7526
页码	8
摘要	Color centers in diamond are promising candidates for quantum sensing in photo-luminescent or photo-electric modes. The photoinduced charge carrier separation in nitrogen-vacancy (NV) centers makes diamond an excellent visible photodetector. To date, the effect of introducing silicon-vacancy (SiV) color centers on the photo-electrical and photo-luminescent properties of diamond remains unclear. To address this issue, high-quality silicon-doped single crystal diamond (Si-SCD) photodetectors were prepared by microwave plasma chemical vapor deposition (MPCVD). It is found that an extremely low dark current of several picoamperes can be achieved with an oxygen-terminated surface. In addition, although the introduction of SiV centers enhances the device's absorption of near-ultraviolet/visible (NUV/Vis) illumination, it has little impact on the solar blind detection performance, exhibiting a responsivity of 36.2 mA W-1 and detectivity of 2.10 x 1012 jones. Meanwhile, the Si-doped detector also exhibits 102 to 103 times higher responses to NUV/Vis signals and a faster cut-off speed. Moreover, a SiV PL enhancement of 50% was achieved with external electrical bias, demonstrating a higher electric pumping efficiency compared with polycrystalline diamond devices. Diamond photo-electric detectors with introduced silicon-vacancy color centers.
资助者	National Natural Science Foundation of China ; National Natural Science Foundation from Liaoning province
DOI	10.1039/d4tc02335h
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[52172056] ; National Natural Science Foundation from Liaoning province[2022MS009]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:001293122900001
出版者	ROYAL SOC CHEMISTRY
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/189121
专题	中国科学院金属研究所
通讯作者	Yang, Bing; Jiang, Xin
作者单位	1.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Shenyang Univ Technol, Sch Environm & Chem Engn, Shenliao West Rd 111, Shenyang 110870, Peoples R China 4.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
推荐引用方式 GB/T 7714	Guo, Xiaokun,Yang, Bing,Zhang, Xinglai,et al. Diamond photo-electric detectors with introduced silicon-vacancy color centers[J]. JOURNAL OF MATERIALS CHEMISTRY C,2024:8.
APA	Guo, Xiaokun.,Yang, Bing.,Zhang, Xinglai.,Lu, Jiaqi.,Huang, Ming.,...&Jiang, Xin.(2024).Diamond photo-electric detectors with introduced silicon-vacancy color centers.JOURNAL OF MATERIALS CHEMISTRY C,8.
MLA	Guo, Xiaokun,et al."Diamond photo-electric detectors with introduced silicon-vacancy color centers".JOURNAL OF MATERIALS CHEMISTRY C (2024):8.