A hot-emitter transistor based on stimulated emission of heated carriers

doi:10.1038/s41586-024-07785-3

IMR OpenIR

	A hot-emitter transistor based on stimulated emission of heated carriers
	Liu, Chi 1,2; Wang, Xin-Zhe 1,2; Shen, Cong 3; Ma, Lai-Peng 1,2; Yang, Xu-Qi 1,2; Kong, Yue 1,2; Ma, Wei 1,2; Liang, Yan 1,2; Feng, Shun 1,2; Wang, Xiao-Yue 1,2; Wei, Yu-Ning 1,2; Zhu, Xi 1,2; Li, Bo 1,2; Li, Chang-Ze 1,2; Dong, Shi-Chao 1,2; Zhang, Li-Ning 3; Ren, Wen-Cai 1,2; Sun, Dong-Ming 1,2; Cheng, Hui-Ming 1,2,4
通讯作者	Liu, Chi(chiliu@imr.ac.cn) ; Zhang, Li-Ning(eelnzhang@pku.edu.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn)
	2024-08-14
发表期刊	NATURE
ISSN	0028-0836
页码	18
摘要	Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies1-5. However, the traditional mechanisms of hot-carrier generation are either carrier injection6-11 or acceleration12,13, which limit device performance in terms of power consumption and negative differential resistance14-17. Mixed-dimensional devices, which combine bulk and low-dimensional materials, can offer different mechanisms for hot-carrier generation by leveraging the diverse potential barriers formed by energy-band combinations18-21. Here we report a hot-emitter transistor based on double mixed-dimensional graphene/germanium Schottky junctions that uses stimulated emission of heated carriers to achieve a subthreshold swing lower than 1 millivolt per decade beyond the Boltzmann limit and a negative differential resistance with a peak-to-valley current ratio greater than 100 at room temperature. Multi-valued logic with a high inverter gain and reconfigurable logic states are further demonstrated. This work reports a multifunctional hot-emitter transistor with significant potential for low-power and negative-differential-resistance applications, marking a promising advancement for the post-Moore era. A mixed-dimensional hot-emitter transistor based on mixed-dimensional graphene/germanium Schottky junctions uses stimulated emission of heated carriers, achieving an ultralow subthreshold swing and a high negative differential resistance.
资助者	National Natural Science Foundation of China ; Excellent Youth Foundation of Liaoning ; National Key Research and Development Program of China
DOI	10.1038/s41586-024-07785-3
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[62125406] ; National Natural Science Foundation of China[52272051] ; National Natural Science Foundation of China[T2293703] ; Excellent Youth Foundation of Liaoning[2023JH3/10200003] ; National Key Research and Development Program of China[2021YFA1200013]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:001300534300014
出版者	NATURE PORTFOLIO
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/189430
专题	中国科学院金属研究所
通讯作者	Liu, Chi; Zhang, Li-Ning; Sun, Dong-Ming
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang, Peoples R China 3.Peking Univ, Sch Elect & Comp Engn, Shenzhen, Peoples R China 4.Chinese Acad Sci, Inst Technol Carbon Neutral, Shenzhen Inst Adv Technol, Shenzhen, Peoples R China
推荐引用方式 GB/T 7714	Liu, Chi,Wang, Xin-Zhe,Shen, Cong,et al. A hot-emitter transistor based on stimulated emission of heated carriers[J]. NATURE,2024:18.
APA	Liu, Chi.,Wang, Xin-Zhe.,Shen, Cong.,Ma, Lai-Peng.,Yang, Xu-Qi.,...&Cheng, Hui-Ming.(2024).A hot-emitter transistor based on stimulated emission of heated carriers.NATURE,18.
MLA	Liu, Chi,et al."A hot-emitter transistor based on stimulated emission of heated carriers".NATURE (2024):18.