Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb0.90Mn6Ge3.25Ga0.39 single crystal

doi:10.1016/j.scriptamat.2024.116345

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	Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb_0.90Mn₆Ge_3.25Ga_0.39 single crystal
	Lv, Bodong 1,2; Zhong, Rui 1,2; Luo, Xiaohua 1,2; Ma, Shengcan 1,2,3; Chen, Changcai 1,2; Wang, Sujuan 1,2; Luo, Qing 1,2,3; Gao, Fei 4,5; Fang, Chunsheng 1,2; Ren, Weijun 4
通讯作者	Luo, Xiaohua(xhluo2018@jxust.edu.cn) ; Ma, Shengcan(mashengcan@jxust.edu.cn)
	2025-01-15
发表期刊	SCRIPTA MATERIALIA
ISSN	1359-6462
卷号	255 页码:6
摘要	Kagome lattice, made of corner-sharing triangles, provides an excellent platform for hosting exotic topological quantum phases. Here, we report the observation of large anomalous Hall effect and topological Hall effect in the Kagome lattice material Yb(0.90)Mn(6)Ge(3.25)Ga(0.3)9 single crystal. Compared to the antiferromagnetic pristine compound YbMn6Ge6, Yb0.90Mn6Ge3.25Ga0.39 has an easy plane ferromagnetic structure below 361 K and presents a spin-reorientation transition at 218 K. An intrinsic anomalous Hall conductivity with the value of 604.2 Omega(-1)center dot cm(-1) is obtained in Yb(0.90)Mn(6)Ge(3.25)Ga(0.3)9, which is the largest in RMn6X6 (X = Ge and Sn) family. Besides, a remarkable topological Hall signal is also observed near room temperature. The topological Hall resistivity of Yb0.90Mn6Ge3.25Ga0.39 is determined to be -1.86 mu Omega center dot cm at 280 K under mu H-0 = 0.3 T. Our results indicate that Yb0.90Mn6Ge3.25Ga0.39 may be an excellent platform to study the relationship between the magnetic and electronic structure and to explore novel quantum phenomenon.
关键词	Kagome lattice Anomalous Hall effect Topological Hall effect Berry curvature
资助者	National Nature Science Foundation of China ; Jiangxi Province Key Laboratory of Magnetic Metallic Materials and Devices
DOI	10.1016/j.scriptamat.2024.116345
收录类别	SCI
语种	英语
资助项目	National Nature Science Foundation of China[52101223] ; National Nature Science Foundation of China[52061014] ; National Nature Science Foundation of China[52071323] ; Jiangxi Province Key Laboratory of Magnetic Metallic Materials and Devices[2024SSY05061]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:001308234000001
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/189920
专题	中国科学院金属研究所
通讯作者	Luo, Xiaohua; Ma, Shengcan
作者单位	1.Jiangxi Univ Sci & Technol, Coll Rare Earths, Jiangxi Prov Key Lab Magnet Met Mat & Devices, Ganzhou Key Lab Rare Earth Magnet Funct Mat & Phys, Ganzhou 341000, Peoples R China 2.Jiangxi Univ Sci & Technol, Natl Rare Earth Funct Mat Innovat Ctr, Ganzhou 341000, Peoples R China 3.Jiangxi Univ Sci & Technol, Fac Mat Met & Chem, Sch Mat Sci & Engn, Ganzhou 341000, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 5.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Lv, Bodong,Zhong, Rui,Luo, Xiaohua,et al. Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb_0.90Mn₆Ge_3.25Ga_0.39 single crystal[J]. SCRIPTA MATERIALIA,2025,255:6.
APA	Lv, Bodong.,Zhong, Rui.,Luo, Xiaohua.,Ma, Shengcan.,Chen, Changcai.,...&Ren, Weijun.(2025).Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb_0.90Mn₆Ge_3.25Ga_0.39 single crystal.SCRIPTA MATERIALIA,255,6.
MLA	Lv, Bodong,et al."Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb_0.90Mn₆Ge_3.25Ga_0.39 single crystal".SCRIPTA MATERIALIA 255(2025):6.