Valley-Polarized Topological Phases with In-Plane Magnetization

doi:10.1021/acs.nanolett.4c03252

IMR OpenIR

	Valley-Polarized Topological Phases with In-Plane Magnetization
	Barik, Ranjan Kumar 1; Mishra, Subhendu 1; Khazaei, Mohammad 2; Wang, Shiyao 3; Liang, Yunye 4; Sun, Yan 5; Ranjbar, Ahmad 6; Tan, Teck Leong 7; Wang, Junjie 3; Yunoki, Seiji 8; Ohno, Kaoru 9; Kawazoe, Yoshiyuki 10; Singh, Abhishek K.1
通讯作者	Singh, Abhishek K.(abhishek@iisc.ac.in)
	2024-10-08
发表期刊	NANO LETTERS
ISSN	1530-6984
卷号	24 期号:42 页码:13213-13218
摘要	The coexistence of valley polarization and topology has considerably facilitated the applications of 2D materials toward valleytronics device technology. However, isolated and distinct valleys are required to observe the valley-related quantum phenomenon. Herein, we report a new mechanism to generate in-plane magnetization direction-dependent isolated valley carriers by preserving or breaking the mirror symmetry in a 2D system. First-principle calculations are carried out on a prototype material, W2MnC2O2 MXene, to demonstrate the mechanism. A valley-coupled topological phase transition among Weyl semimetal, valley-polarized quantum anomalous Hall insulator, and topological semimetal is observed by manipulating the in-plane magnetization directions in W2MnC2O2. Monte Carlo simulations of W2MnC2O2 show that the estimated Curie temperature is around 170 K, indicating the possibility of observing valley-polarized topological states at higher temperatures. Our finding provides a generalized platform for investigating the valley and topological physics, which is extremely important for future quantum information processing applications.
关键词	valley polarization search rule quantum anomalousHall effect in-plane magnetization mirror symmetry topological phases
资助者	Institute of Eminence (IoE) scheme of The Ministry of Human Resource Development, Government of India ; DST-Nanomission program of the Department of Science and Technology, Government of India ; Iran National Science Foundation (INSF)
DOI	10.1021/acs.nanolett.4c03252
收录类别	SCI
语种	英语
资助项目	Institute of Eminence (IoE) scheme of The Ministry of Human Resource Development, Government of India ; DST-Nanomission program of the Department of Science and Technology, Government of India[DST/NM/TUE/QM-1/2019] ; Iran National Science Foundation (INSF)[4025794]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001331390900001
出版者	AMER CHEMICAL SOC
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/190489
专题	中国科学院金属研究所
通讯作者	Singh, Abhishek K.
作者单位	1.Indian Inst Sci, Mat Res Ctr, Bangalore 560012, India 2.Univ Tehran, Dept Phys, Tehran, Iran 3.Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China 4.Shanghai Normal Univ, Dept Phys, Shanghai 200234, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 6.Tech Univ Dresden, Dresden Ctr Computat Mat Sci DCMS, D-01062 Dresden, Germany 7.ASTAR, Inst High Performance Comp IHPC, Singapore 138632, Singapore 8.RIKEN Ctr Computat Sci R CCS, Computat Mat Sci Res Team, Kobe, Hyogo 6500047, Japan 9.Yokohama Natl Univ, Dept Phys, Yokohama 2408501, Japan 10.Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai 9808579, Japan
推荐引用方式 GB/T 7714	Barik, Ranjan Kumar,Mishra, Subhendu,Khazaei, Mohammad,et al. Valley-Polarized Topological Phases with In-Plane Magnetization[J]. NANO LETTERS,2024,24(42):13213-13218.
APA	Barik, Ranjan Kumar.,Mishra, Subhendu.,Khazaei, Mohammad.,Wang, Shiyao.,Liang, Yunye.,...&Singh, Abhishek K..(2024).Valley-Polarized Topological Phases with In-Plane Magnetization.NANO LETTERS,24(42),13213-13218.
MLA	Barik, Ranjan Kumar,et al."Valley-Polarized Topological Phases with In-Plane Magnetization".NANO LETTERS 24.42(2024):13213-13218.