Exploring anti-ferroelectric thin films with high energy storage performance by moderating phase transition | |
Zhang, Tianfu1; Si, Yangyang2; Li, Xudong2; Li, Yijie2; Wang, Tao2; Zhang, Qinghua3,4; Tang, Yunlong5; Chen, Zuhuang2 | |
通讯作者 | Zhang, Tianfu(tfzhang@ustb.edu.cn) ; Chen, Zuhuang(zuhuang@hit.edu.cn) |
2024-12-01 | |
发表期刊 | APPLIED PHYSICS REVIEWS
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ISSN | 1931-9401 |
卷号 | 11期号:4页码:8 |
摘要 | Anti-ferroelectric thin films are renowned for their signature double hysteresis loops and sheds light on the distinguished energy storage capabilities of dielectric capacitors in modern electronic devices. However, anti-ferroelectric capacitors are still facing the dual challenges of low energy density and efficiency to achieve state-of-the-art performance. Their large hysteresis and sharp first-order phase transition usually results in a low energy storage efficiency and easy breakdown, severely obscuring its future application. In this study, we demonstrate that anti-ferroelectric (Pb0.97La0.02)(Zr1-xSnx)O-3 epitaxial thin films exhibit enhanced energy storage performance through local structural heterogeneity to moderate the first-order phase transition by calculating the corresponding polarization as a function of switching time for the first time. The films exhibit remarkable enhanced breakdown strength (similar to 3.47 MV/cm, similar to 5 times the value for PbZrO3) and energy storage performance. Our endeavors have culminated in the ingenious formulation of a novel strategy, namely, the postponement of polarization processes, thereby elevating the breakdown strength and total energy storage performance. This landmark achievement has unveiled a fresh vista of investigative opportunities for advancing the energy storage prowess of electric dielectrics. |
资助者 | National Natural Science Foundation of China10.13039/501100001809 ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities ; China Postdoctoral Science Foundation ; Guangdong Basic and Applied Basic Research Foundation ; Shenzhen Science and Technology Innovation Project ; Shenzhen Science and Technology Program |
DOI | 10.1063/5.0226576 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China10.13039/501100001809[52302133] ; National Natural Science Foundation of China10.13039/501100001809[U1932116] ; National Natural Science Foundation of China[FRF-TP-24-043A] ; Fundamental Research Funds for the Central Universities[2022T150158] ; China Postdoctoral Science Foundation[2020B1515020029] ; Guangdong Basic and Applied Basic Research Foundation[JCYJ20200109112829287] ; Shenzhen Science and Technology Innovation Project[KQTD20200820113045083] ; Shenzhen Science and Technology Program |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:001339989900001 |
出版者 | AIP Publishing |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/190995 |
专题 | 中国科学院金属研究所 |
通讯作者 | Zhang, Tianfu; Chen, Zuhuang |
作者单位 | 1.Univ Sci & Technol Beijing, Sch Math & Phys, Beijing 100083, Peoples R China 2.Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China 3.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Tianfu,Si, Yangyang,Li, Xudong,et al. Exploring anti-ferroelectric thin films with high energy storage performance by moderating phase transition[J]. APPLIED PHYSICS REVIEWS,2024,11(4):8. |
APA | Zhang, Tianfu.,Si, Yangyang.,Li, Xudong.,Li, Yijie.,Wang, Tao.,...&Chen, Zuhuang.(2024).Exploring anti-ferroelectric thin films with high energy storage performance by moderating phase transition.APPLIED PHYSICS REVIEWS,11(4),8. |
MLA | Zhang, Tianfu,et al."Exploring anti-ferroelectric thin films with high energy storage performance by moderating phase transition".APPLIED PHYSICS REVIEWS 11.4(2024):8. |
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