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Complex irregular stacking faults within Zr3Ge secondary phase nanoparticle stimulated by face-centered cubic zirconium phase growth
Han, Fuzhou1,2; Guo, Wenbin1,2; Ren, Jie1,2; Wang, Qichen1,2; Hu, Jianan1,2; Ali, Muhammad1,2; Yuan, Fusen1,2; Zhang, Yingdong1,2; Liu, Chengze1,2; Gu, Hengfei1,3; Li, Geping1,2
通讯作者Li, Geping(gpli@imr.ac.cn)
2025-03-01
发表期刊SCRIPTA MATERIALIA
ISSN1359-6462
卷号257页码:7
摘要Here we report, for the first time, complex irregular stacking faults were generated within tetragonal Zr3Ge secondary phase particles (SPPs) in the Ge-modified Zircaloy-4 (Zr-4) alloy when subjected to high-temperature compression at 600 degrees C. Atomic-scale observations indicated that the complex irregular stacking faults (CISFs) exhibit a non-coplanar deformation configuration characteristic. When viewed along the [001]Zr3Ge direction, atomic shifts were observed on three different crystallographic planes: (100), (010) and (110) planes, in other words, this defect was developed by the repetition and connection of superlattice intrinsic stacking faults on three different planes of the Zr3Ge SPP. Based on the crystallographic orientations relationships among the Zr3Ge and its surrounding precipitates, a mechanical model was proposed to uncover the nature of such CISFs structure. It confirmed that the CISFs can be attributed to the combined effects of the relatively low stacking fault energy and the growth of two nearby FCC-Zr phases.
关键词Complex irregular stacking faults Zr3Ge nanoprecipitate, FCC-Zr phase growth Zirconium alloy
资助者Special Research Assistant Project of the Chinese Academy of Science
DOI10.1016/j.scriptamat.2024.116460
收录类别SCI
语种英语
资助项目Special Research Assistant Project of the Chinese Academy of Science
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号WOS:001363307400001
出版者PERGAMON-ELSEVIER SCIENCE LTD
引用统计
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/191814
专题中国科学院金属研究所
通讯作者Li, Geping
作者单位1.Chinese Acad Sci, Shi Changxu Innovat Ctr Advanved Mat, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
3.Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China
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GB/T 7714
Han, Fuzhou,Guo, Wenbin,Ren, Jie,et al. Complex irregular stacking faults within Zr3Ge secondary phase nanoparticle stimulated by face-centered cubic zirconium phase growth[J]. SCRIPTA MATERIALIA,2025,257:7.
APA Han, Fuzhou.,Guo, Wenbin.,Ren, Jie.,Wang, Qichen.,Hu, Jianan.,...&Li, Geping.(2025).Complex irregular stacking faults within Zr3Ge secondary phase nanoparticle stimulated by face-centered cubic zirconium phase growth.SCRIPTA MATERIALIA,257,7.
MLA Han, Fuzhou,et al."Complex irregular stacking faults within Zr3Ge secondary phase nanoparticle stimulated by face-centered cubic zirconium phase growth".SCRIPTA MATERIALIA 257(2025):7.
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