Complex irregular stacking faults within Zr3Ge secondary phase nanoparticle stimulated by face-centered cubic zirconium phase growth | |
Han, Fuzhou1,2; Guo, Wenbin1,2; Ren, Jie1,2; Wang, Qichen1,2; Hu, Jianan1,2; Ali, Muhammad1,2; Yuan, Fusen1,2; Zhang, Yingdong1,2; Liu, Chengze1,2; Gu, Hengfei1,3; Li, Geping1,2 | |
通讯作者 | Li, Geping(gpli@imr.ac.cn) |
2025-03-01 | |
发表期刊 | SCRIPTA MATERIALIA
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ISSN | 1359-6462 |
卷号 | 257页码:7 |
摘要 | Here we report, for the first time, complex irregular stacking faults were generated within tetragonal Zr3Ge secondary phase particles (SPPs) in the Ge-modified Zircaloy-4 (Zr-4) alloy when subjected to high-temperature compression at 600 degrees C. Atomic-scale observations indicated that the complex irregular stacking faults (CISFs) exhibit a non-coplanar deformation configuration characteristic. When viewed along the [001]Zr3Ge direction, atomic shifts were observed on three different crystallographic planes: (100), (010) and (110) planes, in other words, this defect was developed by the repetition and connection of superlattice intrinsic stacking faults on three different planes of the Zr3Ge SPP. Based on the crystallographic orientations relationships among the Zr3Ge and its surrounding precipitates, a mechanical model was proposed to uncover the nature of such CISFs structure. It confirmed that the CISFs can be attributed to the combined effects of the relatively low stacking fault energy and the growth of two nearby FCC-Zr phases. |
关键词 | Complex irregular stacking faults Zr3Ge nanoprecipitate, FCC-Zr phase growth Zirconium alloy |
资助者 | Special Research Assistant Project of the Chinese Academy of Science |
DOI | 10.1016/j.scriptamat.2024.116460 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | Special Research Assistant Project of the Chinese Academy of Science |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
WOS记录号 | WOS:001363307400001 |
出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/191814 |
专题 | 中国科学院金属研究所 |
通讯作者 | Li, Geping |
作者单位 | 1.Chinese Acad Sci, Shi Changxu Innovat Ctr Advanved Mat, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Han, Fuzhou,Guo, Wenbin,Ren, Jie,et al. Complex irregular stacking faults within Zr3Ge secondary phase nanoparticle stimulated by face-centered cubic zirconium phase growth[J]. SCRIPTA MATERIALIA,2025,257:7. |
APA | Han, Fuzhou.,Guo, Wenbin.,Ren, Jie.,Wang, Qichen.,Hu, Jianan.,...&Li, Geping.(2025).Complex irregular stacking faults within Zr3Ge secondary phase nanoparticle stimulated by face-centered cubic zirconium phase growth.SCRIPTA MATERIALIA,257,7. |
MLA | Han, Fuzhou,et al."Complex irregular stacking faults within Zr3Ge secondary phase nanoparticle stimulated by face-centered cubic zirconium phase growth".SCRIPTA MATERIALIA 257(2025):7. |
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