Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods

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	Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods
	Q. Chen; T. Lu; M. Xu; C. Meng; Y. Hu; K. Sun; I. Shlimak
	2011
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	98 期号:7
摘要	Uniform Ge-nanocrystals (Ge-ncs) embedded in amorphous SiO(2) film were formed by using (74)Ge(+) ion implantation and neutron transmutation doping (NTD) method. Both experimental and theoretical results indicate that the existence of As dopants transmuted from (74)Ge by NTD tunes the already stabilized (crystallized) system back to a metastable state and then activates the mass transfer processes during the transition form this metastable state back to the stable (crystallized) state, and hence the nanocrystal size uniformity and higher volume density of Ge-ncs. This method has the potential to open a route in the three-dimensional nanofabrication. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553770]
部门归属	[chen, q.; lu, t.; hu, y.] sichuan univ, dept phys, chengdu 610064, peoples r china. [chen, q.; lu, t.; hu, y.] sichuan univ, key lab radiat phys & technol minist educ, chengdu 610064, peoples r china. [xu, m.] sichuan normal univ, inst solid state phys, chengdu 610068, peoples r china. [xu, m.] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. [meng, c.] china acad engn phys, inst fluid phys, key lab shock wave & detonat phys res, mianyang 621900, peoples r china. [sun, k.] univ michigan, dept mat sci & engn, ann arbor, mi 48109 usa. [sun, k.] univ michigan, elect microbeam anal lab, ann arbor, mi 48109 usa. [shlimak, i.] bar ilan univ, dept phys, minerva ctr, il-52900 ramat gan, israel. [shlimak, i.] bar ilan univ, jack & pearl resnick inst adv technol, il-52900 ramat gan, israel.;chen, q (reprint author), sichuan univ, dept phys, chengdu 610064, peoples r china;lutiecheng@scu.edu.cn hsuming_2001@yahoo.com.cn
关键词	Transmutation-doped Gaas Electrical-properties Misfit Dislocations Lasers Go Silicon Films
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30262
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Q. Chen,T. Lu,M. Xu,et al. Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods[J]. Applied Physics Letters,2011,98(7).
APA	Q. Chen.,T. Lu.,M. Xu.,C. Meng.,Y. Hu.,...&I. Shlimak.(2011).Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods.Applied Physics Letters,98(7).
MLA	Q. Chen,et al."Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods".Applied Physics Letters 98.7(2011).

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