Microscopic model for the ferroelectric field effect in oxide heterostructures

IMR OpenIR

	Microscopic model for the ferroelectric field effect in oxide heterostructures
	S. Dong; X. T. Zhang; R. Yu; J. M. Liu; E. Dagotto
	2011
发表期刊	Physical Review B
ISSN	1098-0121
卷号	84 期号:15
摘要	A microscopic model Hamiltonian for the ferroelectric field effect is introduced for the study of oxide heterostructures with ferroelectric components. The long-range Coulomb interaction is incorporated as an electrostatic potential, solved self-consistently together with the charge distribution. A generic double-exchange system is used as the conducting channel, epitaxially attached to the ferroelectric gate. The observed ferroelectric screening effect, namely, the charge accumulation/depletion near the interface, is shown to drive interfacial phase transitions that give rise to robust magnetoelectric responses and bipolar resistive switching, in qualitative agreement with previous density functional theory calculations. The model can be easily adapted to other materials by modifying the Hamiltonian of the conducting channel, and it is useful in simulating ferroelectric field effect devices particularly those involving strongly correlated electronic components where ab initio techniques are difficult to apply.
部门归属	[dong, shuai] southeast univ, dept phys, nanjing 211189, peoples r china. [dong, shuai; liu, j-m] nanjing univ, natl lab solid state microstruct, nanjing 210093, peoples r china. [zhang, xiaotian; dagotto, elbio] univ tennessee, dept phys & astron, knoxville, tn 37996 usa. [zhang, xiaotian; dagotto, elbio] oak ridge natl lab, mat sci & technol div, oak ridge, tn 37831 usa. [yu, rong] rice univ, dept phys & astron, houston, tx 77005 usa. [liu, j-m] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;dong, s (reprint author), southeast univ, dept phys, nanjing 211189, peoples r china
关键词	Effect Transistor Effect Devices Thin-films Electronics Interfaces Manganites States Phase
URL	查看原文
WOS记录号	WOS:000295872800008
引用统计	被引频次：47[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30305
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. Dong,X. T. Zhang,R. Yu,et al. Microscopic model for the ferroelectric field effect in oxide heterostructures[J]. Physical Review B,2011,84(15).
APA	S. Dong,X. T. Zhang,R. Yu,J. M. Liu,&E. Dagotto.(2011).Microscopic model for the ferroelectric field effect in oxide heterostructures.Physical Review B,84(15).
MLA	S. Dong,et al."Microscopic model for the ferroelectric field effect in oxide heterostructures".Physical Review B 84.15(2011).