Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering

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	Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering
	J. Gong; X. B. Zhang; Z. L. Pei; C. Sun; L. S. Wen
	2011
发表期刊	Journal of Materials Science & Technology
ISSN	1005-0302
卷号	27 期号:5 页码:393-397
摘要	Aluminum doped zinc oxide (AZO) thin films were prepared by DC magnetron sputtering at low substrate temperature. A coaxial solenoid coil was placed near the magnetron target to enhance the plasma density (J(i)). The enhanced plasma density improved significantly the bulk resistivity (p) and its homogeneity in spatial distribution of AZO films. X-ray diffraction (XRD) analysis revealed that the increased J(i) had influenced the crystallinity, stress relaxation and other material properties. The AZO films deposited in low plasma density (LPD) mode showed marked variation in rho (ranging from similar to 6.5x10(-2) to 1.9x10(-3) Omega.cm), whereas those deposited in high plasma density (LPD) mode showed a better homogeneity of films resistivity (ranging from similar to 1.3x10(-3) to 3.3x10(-3) Omega.cm) at different substrate positions. The average visible transmittance in the wavelength range of 500-800 nm was over 80%, irrespective of the deposition conditions. The atomic force microscopy (AFM) surface morphology showed that AZO films deposited in HPD mode were smoother than that in LPD mode. The high plasma density produced by the coaxial solenoid coil improved the electrical property, surface morphology and the homogeneity in spatial distribution of AZO films deposited at low substrate temperature.
部门归属	[gong, jun; zhang, xiaobo; pei, zhiliang; sun, chao; wen, lishi] chinese acad sci, inst met res, shenyang 110016, peoples r china.;gong, j (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china;jgong@imr.ac.cn
关键词	Sputtering Electronic Conductivity Ion Bombardmentplasma Density Transparent Temperature Parameters Deposition
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WOS记录号	WOS:000291514600002
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30348
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Gong,X. B. Zhang,Z. L. Pei,et al. Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering[J]. Journal of Materials Science & Technology,2011,27(5):393-397.
APA	J. Gong,X. B. Zhang,Z. L. Pei,C. Sun,&L. S. Wen.(2011).Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering.Journal of Materials Science & Technology,27(5),393-397.
MLA	J. Gong,et al."Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering".Journal of Materials Science & Technology 27.5(2011):393-397.

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