Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect

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	Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect; Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect
	T. Y. Kang; Y. Y. Xiu; C. Z. Liu; L. Hui; J. J. Wang; W. P. Tong
	2011 ; 2011
发表期刊	Journal of Alloys and Compounds ; Journal of Alloys and Compounds
ISSN	0925-8388 ; 0925-8388
卷号	509 期号:5 页码:1785-1789
摘要	There was a sudden increase of intermetallic compound (IMC) Cu(6)Sn(5) growth rate in the eutectic Sn58wt. %Bi/Cu joint during aging process. With aging time increasing, Bi accumulated at the Cu(3)Sn/Cu interface and gradually induced the fracture mode of the joint to change from ductile to brittle one along this interface. Bi segregation enhanced IMC Cu(6)Sn(5) growth by means of promoting the interfacial reaction at Cu(3)Sn/Cu interface, which was concluded from IMCs (Cu(6)Sn(5) and Cu(3)Sn) growth behavior for pure Sn/Cu and Sn10wt. %Bi/Cu interconnects at the same temperature. (C) 2010 Elsevier B.V. All rights reserved.; There was a sudden increase of intermetallic compound (IMC) Cu(6)Sn(5) growth rate in the eutectic Sn58wt. %Bi/Cu joint during aging process. With aging time increasing, Bi accumulated at the Cu(3)Sn/Cu interface and gradually induced the fracture mode of the joint to change from ductile to brittle one along this interface. Bi segregation enhanced IMC Cu(6)Sn(5) growth by means of promoting the interfacial reaction at Cu(3)Sn/Cu interface, which was concluded from IMCs (Cu(6)Sn(5) and Cu(3)Sn) growth behavior for pure Sn/Cu and Sn10wt. %Bi/Cu interconnects at the same temperature. (C) 2010 Elsevier B.V. All rights reserved.
部门归属	[xiu, y. y.; liu, c. z.; hui, l.; wang, j. j.] shenyang aerosp univ, shenyang 110136, liaoning, peoples r china. [kang, t. y.; tong, w. p.] northeastern univ, minist educ, key lab electromagnet proc mat, shenyang, peoples r china. [liu, c. z.] chinese acad sci, inst met res, shenyang 110016, peoples r china.;liu, cz (reprint author), shenyang aerosp univ, 37 daoyi s st, shenyang 110136, liaoning, peoples r china;chunzliu@yahoo.com wptong@mail.neu.edu.cn ; [xiu, y. y.; liu, c. z.; hui, l.; wang, j. j.] shenyang aerosp univ, shenyang 110136, liaoning, peoples r china. [kang, t. y.; tong, w. p.] northeastern univ, minist educ, key lab electromagnet proc mat, shenyang, peoples r china. [liu, c. z.] chinese acad sci, inst met res, shenyang 110016, peoples r china.;liu, cz (reprint author), shenyang aerosp univ, 37 daoyi s st, shenyang 110136, liaoning, peoples r china;chunzliu@yahoo.com wptong@mail.neu.edu.cn
关键词	Bi Segregation Bi Segregation Interconnect Interconnect Kinetics Kinetics Intermetallic Compound Growth Intermetallic Compound Growth Lead-free Solders Lead-free Solders Cu Cu
URL	查看原文 ; 查看原文
WOS记录号	WOS:000287167700090 ; WOS:000287167700090
引用统计	被引频次：42[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30430
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	T. Y. Kang,Y. Y. Xiu,C. Z. Liu,et al. Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect, Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect[J]. Journal of Alloys and Compounds, Journal of Alloys and Compounds,2011, 2011,509, 509(5):1785-1789, 1785-1789.
APA	T. Y. Kang,Y. Y. Xiu,C. Z. Liu,L. Hui,J. J. Wang,&W. P. Tong.(2011).Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect.Journal of Alloys and Compounds,509(5),1785-1789.
MLA	T. Y. Kang,et al."Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect".Journal of Alloys and Compounds 509.5(2011):1785-1789.