Joining of Ti(3)SiC(2) by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures

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	Joining of Ti(3)SiC(2) by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures
	A. J. Li; Y. C. Zhou
	2011
发表期刊	Journal of the American Ceramic Society
ISSN	0002-7820
卷号	94 期号:9 页码:3072-3077
摘要	Ti(3)SiC(2) joining has been successfully achieved by depositing a thin Cu or Zr layer on it and heat treating at low temperatures of 950 degrees or 1100 degrees C in an argon atmosphere, respectively, which are similar to 500 degrees C lower than the previous solid solution joining method. X-ray diffraction and scanning electron microscope analyses reveal that a continuous Cu(3)Si or Zr-silicide layer forms at the joint interface through the outward diffusion of Si atoms from the Ti(3)SiC(2) substrate into the deposited Cu or Zr layer. The strength of joints is evaluated by tensile bond-strength test and 4-point bending test methods. The Ti(3)SiC(2)/Cu/Ti(3)SiC(2) joints always fail from the substrate instead of from the bonding interface, while the Ti(3)SiC(2)/Zr/Ti(3)SiC(2) joints fail from the joint interface during tensile bond-strength test. The 4-point bending strength of Ti(3)SiC(2)/Cu/Ti(3)SiC(2) joints reaches a value of 238 MPa, which is 68% of the Ti(3)SiC(2) substrate. So joining using a Cu or Zr film as the interlayer followed by heat treating is a practical and efficient method for joining Ti(3)SiC(2).
部门归属	[li, aijun; zhou, yanchun] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [li, aijun] chinese acad sci, grad sch, beijing 100039, peoples r china.;zhou, yc (reprint author), amer ceram soc, westerville, oh 43082 usa;yczhou714@gmail.com
关键词	Interfacial Reactions Mechanical-properties Damage Tolerance Bulk Ceramics Thin-films Oxidation Microstructure Strength (111)Si Air
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30445
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	A. J. Li,Y. C. Zhou. Joining of Ti(3)SiC(2) by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures[J]. Journal of the American Ceramic Society,2011,94(9):3072-3077.
APA	A. J. Li,&Y. C. Zhou.(2011).Joining of Ti(3)SiC(2) by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures.Journal of the American Ceramic Society,94(9),3072-3077.
MLA	A. J. Li,et al."Joining of Ti(3)SiC(2) by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures".Journal of the American Ceramic Society 94.9(2011):3072-3077.