Effect of Nb Dopant on the Oxidation Behavior of Zr(2) Al(Si) (4)C(5) at 1000-1300 degrees C

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	Effect of Nb Dopant on the Oxidation Behavior of Zr(2) Al(Si) (4)C(5) at 1000-1300 degrees C
	X. P. Lu; Y. C. Zhou
	2011
发表期刊	Journal of the American Ceramic Society
ISSN	0002-7820
卷号	94 期号:6 页码:1687-1690
摘要	Nb-doped Zr(2)[Al(Si)](4)C(5) solid solutions were prepared by in situ hot pressing method and their high-temperature oxidation behavior at 1000 degrees-1300 degrees C were investigated. The oxidation resistance of [Zr(0.9)(Nb(0.1))](2)[Al(Si)](4)C(5) solid solutions is improved remarkably compared with Zr(2)[Al(Si)](4)C(5) without dopant. The improved oxidation resistance is due to the formation of a more protective oxide scale consisting of (Zr,Nb)O(2), Nb(2)Zr(6)O(17), Al(2)O(3), and mullite, in which (Zr,Nb)O(2) solid solution is more effective than ZrO(2) in depressing the inward diffusion of oxygen. In addition, the decrease of cracks in the oxide scale above 1100 degrees C in Nb-doped sample is also beneficial to the improved oxidation resistance.
部门归属	[lu, x. p.; zhou, y. c.] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [lu, x. p.] chinese acad sci, grad sch, beijing 100039, peoples r china.;zhou, yc (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china;yczhou@imr.ac.cn
关键词	Thermoelectric Properties Crystal-structure Bulk Zr2al3c4 Carbide Conductivity Ceramics Powders Carbon Tio2 Geo2
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30567
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. P. Lu,Y. C. Zhou. Effect of Nb Dopant on the Oxidation Behavior of Zr(2) Al(Si) (4)C(5) at 1000-1300 degrees C[J]. Journal of the American Ceramic Society,2011,94(6):1687-1690.
APA	X. P. Lu,&Y. C. Zhou.(2011).Effect of Nb Dopant on the Oxidation Behavior of Zr(2) Al(Si) (4)C(5) at 1000-1300 degrees C.Journal of the American Ceramic Society,94(6),1687-1690.
MLA	X. P. Lu,et al."Effect of Nb Dopant on the Oxidation Behavior of Zr(2) Al(Si) (4)C(5) at 1000-1300 degrees C".Journal of the American Ceramic Society 94.6(2011):1687-1690.