Effects of Bi segregation on the tensile properties of Cu/Cu(3)Sn(100) interface

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	Effects of Bi segregation on the tensile properties of Cu/Cu(3)Sn(100) interface
	X. Y. Pang; Z. Q. Liu; S. Q. Wang; J. K. Shang
	2011
发表期刊	Microelectronics Reliability
ISSN	0026-2714
卷号	51 期号:12 页码:2330-2335
摘要	The relaxed-type tensile processes of the clean and Bi segregated Cu/Cu(3)Sn(1 0 0) interfaces were investigated by the ab initio calculations based on the density functional theory. Fracture occurs at the Cu/Cu(3)Sn interface which has the lowest adhesion energy and tensile strength compared to the Cu/Cu and Cu(3)Sn/Cu(3)Sn interlayers. The theoretical tensile strength of the clean interface is 8.04 GPa, while that of 10% Bi segregated interface drops to 4.72 GPa. According to the atomic and electronic analyzes during tensile test, failure originates from the break of interfacial bonding and the extension of charge depletion region through the interface, when the supercell stretching exceeds the critical tensile strain of 12% for clean interface and 9.5% for Bi segregated interface. Large Bi atom not only introduces interfacial distortion but also reduces the hybridization of surrounding Cu and Sn atoms, which cause the weakening of interfacial mechanical strength of SnBi solder joints. (C) 2011 Elsevier Ltd. All rights reserved.
部门归属	[pang, x. y.; liu, z. q.; wang, s. q.; shang, j. k.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;liu, zq (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;zqliu@imr.ac.cn
关键词	Crack-growth-behavior Lead-free Solders Alpha-al2o3(0001)/cu(111) Interface Mechanical Strength Reactive Interface Molecular-dynamics Joints Cu3sn Cu 1st-principles
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30615
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. Y. Pang,Z. Q. Liu,S. Q. Wang,et al. Effects of Bi segregation on the tensile properties of Cu/Cu(3)Sn(100) interface[J]. Microelectronics Reliability,2011,51(12):2330-2335.
APA	X. Y. Pang,Z. Q. Liu,S. Q. Wang,&J. K. Shang.(2011).Effects of Bi segregation on the tensile properties of Cu/Cu(3)Sn(100) interface.Microelectronics Reliability,51(12),2330-2335.
MLA	X. Y. Pang,et al."Effects of Bi segregation on the tensile properties of Cu/Cu(3)Sn(100) interface".Microelectronics Reliability 51.12(2011):2330-2335.