Interfacial structure of V(2)AlC thin films deposited on (11(2)over-bar0)-sapphire | |
D. P. Sigumonrong; J. Zhang; Y. C. Zhou; D. Music; J. Emmerlich; J. Mayer; J. M. Schneider | |
2011 | |
发表期刊 | Scripta Materialia
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ISSN | 1359-6462 |
卷号 | 64期号:4页码:347-350 |
摘要 | Local epitaxy between V(2)AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V(2)AlC on (11 (2) over bar0)-sapphire. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
部门归属 | [mayer, joachim] rhein westfal th aachen, cent facil electron microscopy, d-52074 aachen, germany. [zhang, jie; zhou, yanchun] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;zhang, j (reprint author), rhein westfal th aachen, cent facil electron microscopy, mies van der rohe str 10, d-52074 aachen, germany;zhang@mch.rwth-aachen.de |
关键词 | Max-phase Thin Film Tem Epitaxial Growth Ab Initio Calculation Ti-al-c Electronic-structure m(n+1)Ax(n) Phases Ge Gas |
URL | 查看原文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/30663 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | D. P. Sigumonrong,J. Zhang,Y. C. Zhou,et al. Interfacial structure of V(2)AlC thin films deposited on (11(2)over-bar0)-sapphire[J]. Scripta Materialia,2011,64(4):347-350. |
APA | D. P. Sigumonrong.,J. Zhang.,Y. C. Zhou.,D. Music.,J. Emmerlich.,...&J. M. Schneider.(2011).Interfacial structure of V(2)AlC thin films deposited on (11(2)over-bar0)-sapphire.Scripta Materialia,64(4),347-350. |
MLA | D. P. Sigumonrong,et al."Interfacial structure of V(2)AlC thin films deposited on (11(2)over-bar0)-sapphire".Scripta Materialia 64.4(2011):347-350. |
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