Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

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	Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure
	J. C. Sun; Q. J. Feng; J. M. Bian; D. Q. Yu; M. K. Li; C. R. Li; H. W. Liang; J. Z. Zhao; H. Qiu; G. T. Du
	2011
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	131 期号:4 页码:825-828
摘要	A p-ZnO:N/n-GaN:Si structure heterojunction light-emitting diode (LED) is fabricated on c-plane sapphire by full metal organic chemical vapor deposition (MOCVD) technique. The p-type layer with hole concentration of 8.94 x 10(16) cm(-3) is composed of nitrogen-doped ZnO using NH(3) as the doping source with subsequent annealing in N(2)O plasma ambient. Silicon-doped GaN film with electron concentration of 1.15 x 10(18) cm(-3) is used as the n-type layer. Desirable rectifying behavior is observed from the current-voltage (I-V) curve of the device. The forward turn on voltage is about 4 V and the reverse breakdown voltage is more than 7 V. A distinct ultraviolet (UV) electroluminescence (EL) with a dominant emission peak centered at 390 nm is detected at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence (PL) spectra. (C) 2010 Elsevier B.V. All rights reserved.
部门归属	[sun, jingchang; feng, qiuju; yu, dongqi; li, mengke; li, chengren; qiu, hong] liaoning normal univ, sch phys & elect technol, dalian 116029, peoples r china. [sun, jingchang; du, guotong] jilin univ, coll elect sci & engn, state key lab integrated optoelect, changchun 130023, peoples r china. [feng, qiuju; bian, jiming; liang, hongwei; zhao, jianze; du, guotong] dalian univ technol, sch phys & optoelect technol, dalian 116024, peoples r china. [bian, jiming] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;sun, jc (reprint author), liaoning normal univ, sch phys & elect technol, dalian 116029, peoples r china;jingchangsun@163.com
关键词	P-zno:N/n-gan:Si Hererojunction Led Uv Electroluminescence Mocvd Chemical-vapor-deposition Zinc-oxide N-zno Nitrogen Films Fabrication Substrate
URL	查看原文
WOS记录号	WOS:000289326000048
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30685
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. C. Sun,Q. J. Feng,J. M. Bian,et al. Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure[J]. Journal of Luminescence,2011,131(4):825-828.
APA	J. C. Sun.,Q. J. Feng.,J. M. Bian.,D. Q. Yu.,M. K. Li.,...&G. T. Du.(2011).Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure.Journal of Luminescence,131(4),825-828.
MLA	J. C. Sun,et al."Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure".Journal of Luminescence 131.4(2011):825-828.