| Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure | |
| J. C. Sun; Q. J. Feng; J. M. Bian; D. Q. Yu; M. K. Li; C. R. Li; H. W. Liang; J. Z. Zhao; H. Qiu; G. T. Du | |
| 2011 | |
| Source Publication | Journal of Luminescence
 |
| ISSN | 0022-2313 |
| Volume | 131Issue:4Pages:825-828 |
| Abstract | A p-ZnO:N/n-GaN:Si structure heterojunction light-emitting diode (LED) is fabricated on c-plane sapphire by full metal organic chemical vapor deposition (MOCVD) technique. The p-type layer with hole concentration of 8.94 x 10(16) cm(-3) is composed of nitrogen-doped ZnO using NH(3) as the doping source with subsequent annealing in N(2)O plasma ambient. Silicon-doped GaN film with electron concentration of 1.15 x 10(18) cm(-3) is used as the n-type layer. Desirable rectifying behavior is observed from the current-voltage (I-V) curve of the device. The forward turn on voltage is about 4 V and the reverse breakdown voltage is more than 7 V. A distinct ultraviolet (UV) electroluminescence (EL) with a dominant emission peak centered at 390 nm is detected at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence (PL) spectra. (C) 2010 Elsevier B.V. All rights reserved. |
| description.department | [sun, jingchang; feng, qiuju; yu, dongqi; li, mengke; li, chengren; qiu, hong] liaoning normal univ, sch phys & elect technol, dalian 116029, peoples r china. [sun, jingchang; du, guotong] jilin univ, coll elect sci & engn, state key lab integrated optoelect, changchun 130023, peoples r china. [feng, qiuju; bian, jiming; liang, hongwei; zhao, jianze; du, guotong] dalian univ technol, sch phys & optoelect technol, dalian 116024, peoples r china. [bian, jiming] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;sun, jc (reprint author), liaoning normal univ, sch phys & elect technol, dalian 116029, peoples r china;jingchangsun@163.com |
| Keyword | P-zno:N/n-gan:Si Hererojunction Led Uv Electroluminescence Mocvd Chemical-vapor-deposition Zinc-oxide N-zno Nitrogen Films Fabrication Substrate |
| URL | 查看原文 |
| WOS ID | WOS:000289326000048 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/30685 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | J. C. Sun,Q. J. Feng,J. M. Bian,et al. Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure[J]. Journal of Luminescence,2011,131(4):825-828. |
| APA | J. C. Sun.,Q. J. Feng.,J. M. Bian.,D. Q. Yu.,M. K. Li.,...&G. T. Du.(2011).Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure.Journal of Luminescence,131(4),825-828. |
| MLA | J. C. Sun,et al."Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure".Journal of Luminescence 131.4(2011):825-828. |
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