Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping

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	Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping
	Y. B. Tang; X. H. Bo; J. Xu; Y. L. Cao; Z. H. Chen; H. S. Song; C. P. Liu; T. F. Hung; W. J. Zhang; H. M. Cheng; I. Bello; S. T. Lee; C. S. Lee
	2011
发表期刊	Acs Nano
ISSN	1936-0851
卷号	5 期号:5 页码:3591-3598
摘要	Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent transport measurements on field-effect transistors constructed from individual NWs revealed the transition from n-type conductivity in the undoped AlN NWs to p-type conductivity In the Mg-doped NWs. By adjusting the doping gas flow rate (0-10 sccm), the conductivity of AlN NWs can be tuned over 7 orders of magnitude from (3.8-8.5) x 10(-6) Omega(-1) cm(-1) for the undoped sample to 15.6-24.4 Omega(-1) cm(-1) for the Mg-doped AlN NWs. Hole concentration as high as 4.7 x 10(19) cm(-3) was achieved for the heaviest doping. In addition, the maximum hole mobility (similar to 6.4 cm(2)/V s) in p-type AlN NWs is much higher than that of Mg-doped AlN films (similar to 1.0 cm(2)/V s).(2) The realization of p-type AlN NWs with tunable electrical transport properties may open great potential in developing practical nanodevices such as deep-UV light-emitting diodes and photodetectors.
部门归属	[tang, yong-bing; bo, xiang-hui; xu, jun; cao, yu-lin; chen, zhen-hua; song, hai-sheng; liu, chao-ping; hung, tak-fu; zhang, wen-jun; bello, igor; lee, shuit-tong; lee, chun-sing] city univ hong kong, cosdaf, hong kong, hong kong, peoples r china. [tang, yong-bing; bo, xiang-hui; xu, jun; cao, yu-lin; chen, zhen-hua; song, hai-sheng; liu, chao-ping; hung, tak-fu; zhang, wen-jun; bello, igor; lee, shuit-tong; lee, chun-sing] city univ hong kong, dept phys & mat sci, hong kong, hong kong, peoples r china. [cheng, hui-ming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;lee, cs (reprint author), city univ hong kong, cosdaf, hong kong, hong kong, peoples r china;cheng@imr.ac.cn apcslee@cityu.edu.hk
关键词	Aluminum Nitride Nanowire Arrays Mg Doping Tunable P-type Conductivity Field-effect Transistors Aluminum Nitride Nanotubes Molecular-beam Epitaxy Field-emission Thin-films Growth Gan Arrays Nanostructures Stability Substrate
URL	查看原文
WOS记录号	WOS:000290826800022
引用统计	被引频次：47[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30705
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. B. Tang,X. H. Bo,J. Xu,et al. Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping[J]. Acs Nano,2011,5(5):3591-3598.
APA	Y. B. Tang.,X. H. Bo.,J. Xu.,Y. L. Cao.,Z. H. Chen.,...&C. S. Lee.(2011).Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping.Acs Nano,5(5),3591-3598.
MLA	Y. B. Tang,et al."Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping".Acs Nano 5.5(2011):3591-3598.

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