The formation of stacking fault tetrahedra in Al and Cu II SFT growth by successive absorption of vacancies generated by dipole annihilation

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	The formation of stacking fault tetrahedra in Al and Cu II SFT growth by successive absorption of vacancies generated by dipole annihilation
	H. Wang; D. S. Xu; R. Yang; P. Veyssiere
	2011
发表期刊	Acta Materialia
ISSN	1359-6454
卷号	59 期号:1 页码:41200
摘要	The growth of stacking fault tetrahedra (SFTs) resulting from dipole annihilation is investigated by molecular dynamics (MD) simulations The atomistic processes Involved during growth immediately after nucleation are studied Analyzed for up to three vacancies the site preference of vacancies on a perfect SFT favors vacancy segregation at edge centers and corners in Cu and Al, respectively The formation of small sized SFTs does not require a prior triangular Frank loop Instead, SFT growth involves vacancies and their clusters agglomerating as complex faceted configurations which assisted by accelerated vacancy migration along SFT edges rearrange into near perfect and perfect SFTs SFT growth by the ledge mechanism is investigated in Part III (C) 2010 Acta Materialia Inc Published by Elsevier Ltd All rights reserved
部门归属	[wang, h.; xu, d. s.; yang, r.] chinese acad sci, inst met res, shenyang 110016, peoples r china. [veyssiere, p.] off natl etud & rech aerosp, lem, cnrs, f-92322 chatillon, france.;wang, h (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china
关键词	Stacking Fault Tetrahedron Dislocation Dipole Dislocation Annihilation Molecular Dynamics Simulations Vacancy Cluster Edge-dislocation Dipoles Fcc Metals Tensile Properties Single-crystals Quenched Gold Temperature-dependence Point-defects Atomic-scale Part i Copper
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WOS记录号	WOS:000284789200002
引用统计	被引频次：36[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30724
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. Wang,D. S. Xu,R. Yang,et al. The formation of stacking fault tetrahedra in Al and Cu II SFT growth by successive absorption of vacancies generated by dipole annihilation[J]. Acta Materialia,2011,59(1):41200.
APA	H. Wang,D. S. Xu,R. Yang,&P. Veyssiere.(2011).The formation of stacking fault tetrahedra in Al and Cu II SFT growth by successive absorption of vacancies generated by dipole annihilation.Acta Materialia,59(1),41200.
MLA	H. Wang,et al."The formation of stacking fault tetrahedra in Al and Cu II SFT growth by successive absorption of vacancies generated by dipole annihilation".Acta Materialia 59.1(2011):41200.