| Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon |
| T. Wang; X. Li; W. Feng; W. Li; C. Tao; J. Wen
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| 2011
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| 发表期刊 | Optoelectronics and Advanced Materials-Rapid Communications
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| ISSN | 1842-6573
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| 卷号 | 5期号:5-6页码:495-498 |
| 摘要 | The morphology of porous silicon treated by electrochemical process depends sensitively on the anodization parameters, such as the current density and electrolyte concentration. In this work, the self-assembly quasi-regular arrangements porous silicon have been fabricated by controlling of the several important anodization parameters. The structure and luminescence characteristics of the etched porous silicon were studied. We discussed the influence of the current density on the morphology of the porous silicon layer and on the luminescence characteristics, and also investigated the effect of anodization time on the luminescence characteristics. Scanning electron microscopy (SEM) images showed that the pores have almost the same size and depth, grow perpendicular to the surface and parallel to each other. The pore diameter ranging from 500 nm to 1 mu m and pore depth being capable of reaching 20 mu m, fresh porous silicon can emit the red light at room temperature and be excited at 400 nm. |
| 部门归属 | [wang, t.; li, x.; wen, j.] chongqing univ, coll chem & chem engn, chongqing 400044, peoples r china. [feng, w.] chongqing univ technol, dept appl phys, chongqing 400054, peoples r china. [feng, w.] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. [li, w.; tao, c.] chongqing univ, coll optoelect engn, chongqing 400044, peoples r china.;li, x (reprint author), chongqing univ, coll chem & chem engn, chongqing 400044, peoples r china;xuemingli@cqu.edu.cn
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| 关键词 | Porous Silicon
Electrochemical Anodization
Quasi-regular Arrangement
Photoluminescence
P-type Silicon
Macroporous Silicon
Si Substrate
Alumina
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| URL | 查看原文
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| WOS记录号 | WOS:000292891400005
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/30743
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| 专题 | 中国科学院金属研究所
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推荐引用方式
GB/T 7714 |
T. Wang,X. Li,W. Feng,et al. Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon[J]. Optoelectronics and Advanced Materials-Rapid Communications,2011,5(5-6):495-498.
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| APA |
T. Wang,X. Li,W. Feng,W. Li,C. Tao,&J. Wen.(2011).Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon.Optoelectronics and Advanced Materials-Rapid Communications,5(5-6),495-498.
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| MLA |
T. Wang,et al."Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon".Optoelectronics and Advanced Materials-Rapid Communications 5.5-6(2011):495-498.
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