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Rashba-induced spin accumulation in a quantum wire with an impurity
S. Zhang; W. J. Gong; G. Z. Wei; A. Du
2011
发表期刊Journal of Applied Physics
ISSN0021-8979
卷号109期号:2
摘要In this work, we study the properties of the Rashba-induced spin accumulation in a quantum wire, by considering an impurity in this system. First, in the zero-impurity case, the dependence of the spin accumulation on the structure parameters is shown, it is consequently found that in addition to the quantum interference, the spin accumulation is determined by the quantum-wire bandwidth and the external bias. Next we, respectively, consider the cases of the impurity in the Rashba region and the normal region to present the effect of the impurity on the spin accumulation. We see that the impurity destroys the spin accumulation in a nontrivial way, and its influence on the spin accumulation is tightly associated with the coupling manners and strengths between the impurity and the quantum wire and the impurity energy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3532036]
部门归属[zhang, sha; gong, weijiang; wei, guozhu; du, an] northeastern univ, coll sci, shenyang 110819, peoples r china. [gong, weijiang; wei, guozhu] acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;zhang, s (reprint author), northeastern univ, coll sci, shenyang 110819, peoples r china;weijianggong@gmail.com
关键词Electronic Transport Dot Spintronics Layers Wells Inas
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WOS记录号WOS:000286896400042
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被引频次:8[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/30908
专题中国科学院金属研究所
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S. Zhang,W. J. Gong,G. Z. Wei,et al. Rashba-induced spin accumulation in a quantum wire with an impurity[J]. Journal of Applied Physics,2011,109(2).
APA S. Zhang,W. J. Gong,G. Z. Wei,&A. Du.(2011).Rashba-induced spin accumulation in a quantum wire with an impurity.Journal of Applied Physics,109(2).
MLA S. Zhang,et al."Rashba-induced spin accumulation in a quantum wire with an impurity".Journal of Applied Physics 109.2(2011).
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