Isotopic mass effects for low-energy channeling in a silicon crystal

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	Isotopic mass effects for low-energy channeling in a silicon crystal
	L. P. Zheng; Z. Y. Zhu; Y. Li; L. Yan; D. Z. Zhu
	2011
发表期刊	Radiation Effects and Defects in Solids
ISSN	1042-0150
卷号	166 期号:11 页码:861-865
摘要	Monte Carlo (MC) simulations have been used to study the low-energy channeling of (10)B and (11)B ions along the [100] axis in Si crystal. MC simulations show that the critical angle Psi(C) approximate to 15.3(keV/E)(1/2) (in degrees) for the channeling of isotopic (10)B ions and Psi(C) = 14.5(keV/E)(1/2) (in degrees) for the channeling of isotopic (11)B ions, where E is the incident energy. This means that (Psi(C) (for 10B ions)/Psi(C for 11B ions)) approximate to (15.3/14.5) approximate to (11/10)(1/2).
部门归属	[zheng, li-ping; zhu, zhi-yuan; li, yong; yan, long; zhu, de-zhang] chinese acad sci, shanghai inst appl phys, shanghai 201800, peoples r china. [zheng, li-ping] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;li, y (reprint author), chinese acad sci, shanghai inst appl phys, pob 800-204, shanghai 201800, peoples r china;liyong@sinap.ac.cn
关键词	Mass Effect Channeling Silicon Crystal Single-wall Nanotubes Carbon Nanotubes Charged-particles Molecular-dynamics Critical Angles Heavy-ions Dependence Atoms Distributions Radiation
URL	查看原文
WOS记录号	WOS:000296665900003
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30969
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. P. Zheng,Z. Y. Zhu,Y. Li,et al. Isotopic mass effects for low-energy channeling in a silicon crystal[J]. Radiation Effects and Defects in Solids,2011,166(11):861-865.
APA	L. P. Zheng,Z. Y. Zhu,Y. Li,L. Yan,&D. Z. Zhu.(2011).Isotopic mass effects for low-energy channeling in a silicon crystal.Radiation Effects and Defects in Solids,166(11),861-865.
MLA	L. P. Zheng,et al."Isotopic mass effects for low-energy channeling in a silicon crystal".Radiation Effects and Defects in Solids 166.11(2011):861-865.