Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads | |
B. H. Zhou; X. W. Chen; B. L. Zhou; K. H. Ding; G. H. Zhou | |
2011 | |
发表期刊 | Journal of Physics-Condensed Matter
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ISSN | 0953-8984 |
卷号 | 23期号:13 |
摘要 | We theoretically investigate the spin-dependent transport for the system of an armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic insulator is deposited on the AGNR to induce an exchange splitting between spin-up and -down carriers. By using the standard nonequilibrium Green's function (NGF) technique, it is demonstrated that the spin-resolved transport property for the system depends sensitively on both the width of AGNR and the polarization strength of FM leads. The tunneling magnetoresistance (TMR) around zero bias voltage possesses a pronounced plateau structure for a system with semiconducting 7-AGNR or metallic 8-AGNR in the absence of exchange splitting, but this plateau structure for the 8-AGNR system is remarkably broader than that for the 7-AGNR one. Interestingly, an increase of the exchange splitting Delta suppresses the amplitude of the structure for the 7-AGNR system. However, the TMR is much enhanced for the 8-AGNR system under a bias amplitude comparable to the splitting strength. Further, the current-induced spin-transfer torque (STT) for the 7-AGNR system is systematically larger than that for the 8-AGNR one. The findings here suggest the design of GNR-based spintronic devices by using a metallic AGNR, but it is more favorable to fabricate a current-controlled magnetic memory element by using a semiconducting AGNR. |
部门归属 | [zhou, benhu; chen, xiongwen; zhou, benliang; zhou, guanghui] hunan normal univ, key lab low dimens struct & quantum manipulat, minist educ, changsha 410081, hunan, peoples r china. [ding, kai-he] changsha univ sci & technol, dept phys & elect sci, changsha 410076, hunan, peoples r china. [zhou, guanghui] chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. [zhou, benhu; chen, xiongwen; zhou, benliang; zhou, guanghui] hunan normal univ, dept phys, changsha 410081, hunan, peoples r china.;zhou, bh (reprint author), hunan normal univ, dept phys, changsha 410081, hunan, peoples r china;ghzhou@hunnu.edu.cn |
关键词 | Magnetic Tunnel-junctions Magnetoresistance Multilayers Devices Films |
URL | 查看原文 |
WOS记录号 | WOS:000288749300008 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/30982 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | B. H. Zhou,X. W. Chen,B. L. Zhou,et al. Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads[J]. Journal of Physics-Condensed Matter,2011,23(13). |
APA | B. H. Zhou,X. W. Chen,B. L. Zhou,K. H. Ding,&G. H. Zhou.(2011).Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads.Journal of Physics-Condensed Matter,23(13). |
MLA | B. H. Zhou,et al."Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads".Journal of Physics-Condensed Matter 23.13(2011). |
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