Zinc sulfide nanowire arrays on silicon wafers for field emitters

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	Zinc sulfide nanowire arrays on silicon wafers for field emitters
	Z. G. Chen; L. Cheng; J. Zou; X. D. Yao; G. Q. Lu; H. M. Cheng
	2010
发表期刊	Nanotechnology
ISSN	0957-4484
卷号	21 期号:6
摘要	Wurtzite structured zinc sulfide (ZnS) nanowire arrays are synthesized on silicon (111) wafers by a facile evaporation-condensation approach. These ZnS nanowire arrays possess predominant field emission properties with a low turn-on field of 2.9 V mu m(-1), a low threshold field of 4.25 V mu m(-1), a high field-enhancement factor (over 2700), and a high stability with a low fluctuation (similar to 0.8%). The improved field emission performance of these ZnS nanowire arrays is attributed to their specific crystallographic feature-array structures with nanotips and high single crystallinity. These results suggest that such ZnS nanowire arrays can be used as building blocks for field emitters.
部门归属	[zou, jin] univ queensland, ctr microscopy & microanal, st lucia, qld 4072, australia. [chen, zhi-gang; cheng, hui-ming] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [yao, xiangdong; lu, gao qing (max)] univ queensland, arc ctr excellence funct nanomat, st lucia, qld 4072, australia.;zou, j (reprint author), univ queensland, ctr microscopy & microanal, st lucia, qld 4072, australia;j.zou@uq.edu.au maxlu@uq.edu.au
关键词	Emission Properties Zns Nanowire Homoepitaxial Growth Nanostructures Cathodoluminescence Nanobelts Nanotube
URL	查看原文
WOS记录号	WOS:000273553300021
引用统计	被引频次：23[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31039
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. G. Chen,L. Cheng,J. Zou,et al. Zinc sulfide nanowire arrays on silicon wafers for field emitters[J]. Nanotechnology,2010,21(6).
APA	Z. G. Chen,L. Cheng,J. Zou,X. D. Yao,G. Q. Lu,&H. M. Cheng.(2010).Zinc sulfide nanowire arrays on silicon wafers for field emitters.Nanotechnology,21(6).
MLA	Z. G. Chen,et al."Zinc sulfide nanowire arrays on silicon wafers for field emitters".Nanotechnology 21.6(2010).