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ZnS Branched Architectures as Optoelectronic Devices and Field Emitters
Z. G. Chen; L. N. Cheng; H. Y. Xu; J. Z. Liu; J. Zou; T. Sekiguchi; G. Q. Lu; H. M. Cheng
2010
Source PublicationAdvanced Materials
ISSN0935-9648
Volume22Issue:21Pages:2376-2380
AbstractA unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.
description.department[chen, zhi-gang; cheng, lina; xu, hong-yi; liu, ji-zi; zou, jin] univ queensland, ctr microscopy & microanal, brisbane, qld, australia. [chen, zhi-gang; cheng, hui-ming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang, peoples r china. [lu, gao qing (max)] univ queensland, arc ctr excellence funct nanomat, brisbane, qld, australia. [sekiguchi, takashi] natl inst mat sci, adv elect mat ctr, tsukuba, ibaraki, japan.;zou, j (reprint author), univ queensland, ctr microscopy & microanal, brisbane, qld, australia;j.zou@uq.edu.au maxlu@uq.edu.au cheng@imr.ac.cn
KeywordEmission Properties Nanowire Arrays Growth Nanostructures Cathodoluminescence Nanobelts Nanoarchitectures Heterostructures Nanocrystals Fabrication
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/31040
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Z. G. Chen,L. N. Cheng,H. Y. Xu,et al. ZnS Branched Architectures as Optoelectronic Devices and Field Emitters[J]. Advanced Materials,2010,22(21):2376-2380.
APA Z. G. Chen.,L. N. Cheng.,H. Y. Xu.,J. Z. Liu.,J. Zou.,...&H. M. Cheng.(2010).ZnS Branched Architectures as Optoelectronic Devices and Field Emitters.Advanced Materials,22(21),2376-2380.
MLA Z. G. Chen,et al."ZnS Branched Architectures as Optoelectronic Devices and Field Emitters".Advanced Materials 22.21(2010):2376-2380.
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