ZnS Branched Architectures as Optoelectronic Devices and Field Emitters

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	ZnS Branched Architectures as Optoelectronic Devices and Field Emitters
	Z. G. Chen; L. N. Cheng; H. Y. Xu; J. Z. Liu; J. Zou; T. Sekiguchi; G. Q. Lu; H. M. Cheng
	2010
发表期刊	Advanced Materials
ISSN	0935-9648
卷号	22 期号:21 页码:2376-2380
摘要	A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.
部门归属	[chen, zhi-gang; cheng, lina; xu, hong-yi; liu, ji-zi; zou, jin] univ queensland, ctr microscopy & microanal, brisbane, qld, australia. [chen, zhi-gang; cheng, hui-ming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang, peoples r china. [lu, gao qing (max)] univ queensland, arc ctr excellence funct nanomat, brisbane, qld, australia. [sekiguchi, takashi] natl inst mat sci, adv elect mat ctr, tsukuba, ibaraki, japan.;zou, j (reprint author), univ queensland, ctr microscopy & microanal, brisbane, qld, australia;j.zou@uq.edu.au maxlu@uq.edu.au cheng@imr.ac.cn
关键词	Emission Properties Nanowire Arrays Growth Nanostructures Cathodoluminescence Nanobelts Nanoarchitectures Heterostructures Nanocrystals Fabrication
URL	查看原文
WOS记录号	WOS:000279100200016
引用统计	被引频次：101[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31040
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. G. Chen,L. N. Cheng,H. Y. Xu,et al. ZnS Branched Architectures as Optoelectronic Devices and Field Emitters[J]. Advanced Materials,2010,22(21):2376-2380.
APA	Z. G. Chen.,L. N. Cheng.,H. Y. Xu.,J. Z. Liu.,J. Zou.,...&H. M. Cheng.(2010).ZnS Branched Architectures as Optoelectronic Devices and Field Emitters.Advanced Materials,22(21),2376-2380.
MLA	Z. G. Chen,et al."ZnS Branched Architectures as Optoelectronic Devices and Field Emitters".Advanced Materials 22.21(2010):2376-2380.