Synthesis of GaPO(4)-GaN Coaxial Nanowires

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	Synthesis of GaPO(4)-GaN Coaxial Nanowires
	L. T. Fu; Z. G. Chen; H. T. Cong
	2010
发表期刊	Journal of Materials Science & Technology
ISSN	1005-0302
卷号	26 期号:1 页码:15-19
摘要	GaPO(4)-GaN coaxial nanowires were synthesized by two-step chemical vapor deposition method using H(2) and NH(3) as reactant gas in turn at 950 degrees C. The morphology and microstructures of the GaPO(4)-GaN coaxial nanowires were studied by scanning elctron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The nanowires have an average diameter of similar to 15 nm and length of hundreds of nanometers. The core is GaPO(4) crystal and the outer shell is GaN crystal. The formation mechanism was discussed and the key factors controlling the growth are temperature and the concentration of reactant gases. These coaxial nanowires may have potential application for piezoluminescence nano-devices, and the two-step synthetic technique could be used to grow rationally other 1D GaN-based nanowire heterostructures.
部门归属	[fu, lutang; chen, zhigang; cong, hongtao] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china.;cong, ht (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china;htcong@imr.ac.cn
关键词	Gan Gapo(4) Coaxial Nanowires Nanorods Nitride Gan Heterostructures Transistors Nanocables Nanotubes Emission
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31111
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. T. Fu,Z. G. Chen,H. T. Cong. Synthesis of GaPO(4)-GaN Coaxial Nanowires[J]. Journal of Materials Science & Technology,2010,26(1):15-19.
APA	L. T. Fu,Z. G. Chen,&H. T. Cong.(2010).Synthesis of GaPO(4)-GaN Coaxial Nanowires.Journal of Materials Science & Technology,26(1),15-19.
MLA	L. T. Fu,et al."Synthesis of GaPO(4)-GaN Coaxial Nanowires".Journal of Materials Science & Technology 26.1(2010):15-19.