Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters

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	Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters
	L. T. Fu; Z. G. Chen; D. W. Wang; L. N. Cheng; H. Y. Xu; J. Z. Liu; H. T. Cong; G. Q. Lu; J. Zou
	2010
发表期刊	Journal of Physical Chemistry C
ISSN	1932-7447
卷号	114 期号:21 页码:9627-9633
摘要	Novel P-doped GaN triangular microtubes were synthesized by a facile chemical vapor deposition method. This novel structure consists of a single hexagonal wurtzite phase with a triangular cross section. The tube lengths range from tens of to several hundred micrometers, and each side has a width between 0.5 and 1 mu m, with a tube wall thickness of several tens of nanometers. The formation mechanism of this triangular tubular structure is a vapor solid methanism, as determined by electron microscopy. Extraordinary and stable infrared emission (centered at similar to 724 nm) from the P-doped GaN triangular microtubes was observed from their photoluminescence spectroscopy. The low turn-on field (2.9 V mu m(-1)), high field-enhancement factor, large current density (3 mA cm(-2) at a field of similar to 9.5 V mu m(-1)), and high stability indicate the suitability of P-doped GaN microtubes as potential field emitters. This field emission property is attributed to the specific crystallographic feature-the rigid triangular structures with effective P doping and rough surface hillocks.
部门归属	[fu, lu-tang; cong, hong-tao] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [wang, da-wei; lu, gao qing (max)] univ queensland, arc ctr excellence funct nanomat, brisbane, qld 4072, australia. [zou, jin] univ queensland, ctr microscopy & microanal, brisbane, qld 4072, australia.;cong, ht (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;htcong@imr.ac.cn j.zou@uq.edu.au
关键词	Gallium Nitride Nanowires Vapor-phase Epitaxy Emission Properties Optical-properties Carbon Nanotubes Cross-sections Growth Cathodoluminescence Nanorods Heterostructures
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WOS记录号	WOS:000278003700013
引用统计	被引频次：30[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31112
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. T. Fu,Z. G. Chen,D. W. Wang,et al. Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters[J]. Journal of Physical Chemistry C,2010,114(21):9627-9633.
APA	L. T. Fu.,Z. G. Chen.,D. W. Wang.,L. N. Cheng.,H. Y. Xu.,...&J. Zou.(2010).Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters.Journal of Physical Chemistry C,114(21),9627-9633.
MLA	L. T. Fu,et al."Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters".Journal of Physical Chemistry C 114.21(2010):9627-9633.