Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device

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	Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device
	C. Jiang; X. F. Xie; W. J. Gong; G. Z. Wei
	2010
发表期刊	European Physical Journal B
ISSN	1434-6028
卷号	75 期号:2 页码:237-245
摘要	Nonequilibrium electron and spin transport properties in a parallel double quantum dot (QD) Fano interferometer are theoretically studied. With the shift of gate voltage around the chemical potential of either lead, we find the Fano lineshapes in the differential conductance spectra, which is sensitively determined by the bias voltage strength and appropriate QD level distributions. The intradot Coulomb interactions modulate the Fano interference in a substantial way and can induce the emergence of negative differential conductance, because of its nontrivial role in splitting the QD levels. In the presence of a local Rashba spin-orbit coupling, the interplay between the magnetic and Rashba fields induces the occurrence of the nonequilibrium spin-related Fano interference, different from the linear-transport results. Furthermore, the striking Coulomb-driven spin accumulation in the 'resonant-channel' QD appears.
部门归属	[jiang, c.] shenyang univ technol, basic dept, liaoyang 111003, peoples r china. [xie, x. f.; gong, w. j.; wei, g. z.] northeastern univ, coll sci, shenyang 110004, peoples r china. [gong, w. j.; wei, g. z.] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;jiang, c (reprint author), shenyang univ technol, basic dept, liaoyang 111003, peoples r china;weijianggong@gmail.com
关键词	Negative Differential Conductance Transport Charge Fluctuations Resonances Amplifiers Nanotubes Coherence Blockade States
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WOS记录号	WOS:000278473300019
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31175
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	C. Jiang,X. F. Xie,W. J. Gong,et al. Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device[J]. European Physical Journal B,2010,75(2):237-245.
APA	C. Jiang,X. F. Xie,W. J. Gong,&G. Z. Wei.(2010).Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device.European Physical Journal B,75(2),237-245.
MLA	C. Jiang,et al."Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device".European Physical Journal B 75.2(2010):237-245.