Enhanced stress relaxation of Sn-3.8Ag-0.7Cu solder by electrical current; Enhanced stress relaxation of Sn-3.8Ag-0.7Cu solder by electrical current | |
H. Y. Liu; Q. S. Zhu; L. Zhang; Z. G. Wang; J. K. Shang | |
2010 ; 2010 | |
发表期刊 | Journal of Materials Research
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ISSN | 0884-2914 ; 0884-2914 |
卷号 | 25期号:6页码:1172-1178 |
摘要 | The stress relaxation responses of the Sn-3.8Ag-0.7Cu joints following exposure to electrical currents were examined to investigate the effect of electromigration on the reliability of solder joints. It was found that the stress relaxation rate was enhanced for the Sn-3.8Ag-0.7Cu solder joints subjected to a current density of 2 x 10(4) A/cm(2). Sn hillock formation was observed in situ on the surface of the solder joint and the increase of the hillock volume was obtained as a function of the current application time. Analysis of the vacancy flux indicated that the variations of the vacancy concentration with the electromigration time from the calculations agreed with the growth kinetics of the hillocks observed in the experiments. By modeling the stress relaxation as a climb-assisted dislocation glide process, it is shown that the vacancy accumulation induced by electromigration enhanced the dislocation climb rate, resulting in a large increase of the stress relaxation rate.; The stress relaxation responses of the Sn-3.8Ag-0.7Cu joints following exposure to electrical currents were examined to investigate the effect of electromigration on the reliability of solder joints. It was found that the stress relaxation rate was enhanced for the Sn-3.8Ag-0.7Cu solder joints subjected to a current density of 2 x 10(4) A/cm(2). Sn hillock formation was observed in situ on the surface of the solder joint and the increase of the hillock volume was obtained as a function of the current application time. Analysis of the vacancy flux indicated that the variations of the vacancy concentration with the electromigration time from the calculations agreed with the growth kinetics of the hillocks observed in the experiments. By modeling the stress relaxation as a climb-assisted dislocation glide process, it is shown that the vacancy accumulation induced by electromigration enhanced the dislocation climb rate, resulting in a large increase of the stress relaxation rate. |
部门归属 | [liu, haiyan; zhu, qingsheng; zhang, li; wang, zhongguang] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [shang, jian ku] univ illinois, dept mat sci & engn, urbana, il 61801 usa.;zhu, qs (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china;qszhu@imr.ac.cn jkshang@illinois.edu ; [liu, haiyan; zhu, qingsheng; zhang, li; wang, zhongguang] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [shang, jian ku] univ illinois, dept mat sci & engn, urbana, il 61801 usa.;zhu, qs (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china;qszhu@imr.ac.cn jkshang@illinois.edu |
关键词 | Pb-free Solder Pb-free Solder Electromigration-induced Failure Electromigration-induced Failure Creep-behavior Creep-behavior Joints Joints Alloy Alloy Sn Sn Tin Tin Composite Composite Mechanism Mechanism |
URL | 查看原文 ; 查看原文 |
WOS记录号 | WOS:000278161900023 ; WOS:000278161900023 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/31292 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | H. Y. Liu,Q. S. Zhu,L. Zhang,et al. Enhanced stress relaxation of Sn-3.8Ag-0.7Cu solder by electrical current, Enhanced stress relaxation of Sn-3.8Ag-0.7Cu solder by electrical current[J]. Journal of Materials Research, Journal of Materials Research,2010, 2010,25, 25(6):1172-1178, 1172-1178. |
APA | H. Y. Liu,Q. S. Zhu,L. Zhang,Z. G. Wang,&J. K. Shang.(2010).Enhanced stress relaxation of Sn-3.8Ag-0.7Cu solder by electrical current.Journal of Materials Research,25(6),1172-1178. |
MLA | H. Y. Liu,et al."Enhanced stress relaxation of Sn-3.8Ag-0.7Cu solder by electrical current".Journal of Materials Research 25.6(2010):1172-1178. |
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