Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films

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	Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films
	W. W. Liu; S. Q. Zhao; K. Zhao; A. W. Sun
	2010
发表期刊	International Journal of Photoenergy
ISSN	1110-662X
摘要	A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films. Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface. The highest photovoltaic responsivity of 27.1 mV mJ(-1) was observed, with a decline time of similar to 1.5 ns and a full width at half-maximum (FWHM) of similar to 4 ns. The photovoltaic position sensitivity can reach about 3.8 mV mJ(-1) mm(-1). This paper demonstrates the potential of Ag-doped ZnO films in the position-sensitive infrared detection
部门归属	[liu, wenwei; zhao, kun] china univ petr, state key lab petr resource & prospecting, beijing 102249, peoples r china. [liu, wenwei; zhao, songqing; zhao, kun; sun, andwei] china univ petr, lab opt sensing & detecting technol, beijing 102249, peoples r china. [zhao, kun] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;zhao, k (reprint author), china univ petr, state key lab petr resource & prospecting, beijing 102249, peoples r china;zhk@cup.edu.cn
关键词	Photodetectors
URL	查看原文
WOS记录号	WOS:000279769900001
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31314
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. W. Liu,S. Q. Zhao,K. Zhao,et al. Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films[J]. International Journal of Photoenergy,2010.
APA	W. W. Liu,S. Q. Zhao,K. Zhao,&A. W. Sun.(2010).Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films.International Journal of Photoenergy.
MLA	W. W. Liu,et al."Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films".International Journal of Photoenergy (2010).