How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?

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	How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?
	M. Xu; Q. Y. Chen; S. Xu; K. Ostrikov; Y. Wei; Y. C. Ee
	2010
发表期刊	Physica E-Low-Dimensional Systems & Nanostructures
ISSN	1386-9477
卷号	42 期号:8 页码:2016-2020
摘要	The effect of a SiO(2) nanolayer and annealing temperature on the UV/visible room-temperature photoluminescence (PL) from SiN(x) films synthesized by rf magnetron sputtering is studied. The PL intensity can be maximized when the SiO(2) layer is 5-10 nm thick at 800 degrees C annealing temperature and only 2 nm at 1000 degrees C. A composition-structure-property analysis reveals that the PL intensity is directly related to both the surface chemical states and the content of the Si-0 and Si-N bonds in the SiN(x), films. These results are relevant for the development of advanced optoelectronic and photonic emitters and sensors. (C) 2010 Elsevier B.V. All rights reserved.
部门归属	[xu, m.; chen, q. y.; wei, y.] sichuan normal univ, inst solid state phys, lab low dimens struct phys, chengdu 610068, peoples r china. [xu, m.] chinese acad sci, int ctr mat sci, shenyang 110016, peoples r china. [xu, s.] nanyang technol univ, plasma sources & applicat ctr, nie, singapore 637616, singapore. [xu, s.] nanyang technol univ, inst adv studies, singapore 637616, singapore. [ostrikov, k.] csiro mat sci & engn, lindfield, nsw 2070, australia. [ee, y. c.] chartered semicond mfg ltd, singapore 738406, singapore.;xu, m (reprint author), sichuan normal univ, inst solid state phys, lab low dimens struct phys, chengdu 610068, peoples r china;hsuming_2001@yahoo.com.cn
关键词	Sinx Film Sio(2) Annealing Photoluminescence Silicon Oxynitride Si0.7ge0.3 Layers Defect Spectrum Nanostructures Luminescence Morphology Devices Origin Growth
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31610
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	M. Xu,Q. Y. Chen,S. Xu,et al. How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?[J]. Physica E-Low-Dimensional Systems & Nanostructures,2010,42(8):2016-2020.
APA	M. Xu,Q. Y. Chen,S. Xu,K. Ostrikov,Y. Wei,&Y. C. Ee.(2010).How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?.Physica E-Low-Dimensional Systems & Nanostructures,42(8),2016-2020.
MLA	M. Xu,et al."How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?".Physica E-Low-Dimensional Systems & Nanostructures 42.8(2010):2016-2020.