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Synthesis of aluminum nitride thin films by filtered arc ion plating deposition
X. B. Yan; Y. L. Dong; H. Q. Li; J. Gong; C. Sun
2010
发表期刊Materials Letters
ISSN0167-577X
卷号64期号:11页码:1261-1263
摘要Thin films of aluminum nitride (AlN) were deposited on stainless steel and glass substrates by a modified deposition technique, filtered arc ion plating, at an enhanced deposition rate. X-ray diffraction spectra confirmed the exclusive presence of AlN hexagonal wurtzite phase. Under a mixed gas (Ar + N(2)) pressure of 0.90 Pa and a bias voltage of -400 V. the deposited films exhibited a fairly low surface roughness of 2.23 nm. The thin films were proved higher than 75% transparent in the visible spectral region. The bonding strength between the film and substrate was verified higher than 20 N. Thus high performance of such AlN thin films can be expected in applications. (C) 2010 Elsevier B.V. All rights reserved.
部门归属[yan, xubo; dong, yuliang; li, haiqing; gong, jun; sun, chao] chinese acad sci, inst met res, state key lab corros & protect, shenyang 110016, peoples r china.;sun, c (reprint author), chinese acad sci, inst met res, state key lab corros & protect, 72 wenhua rd, shenyang 110016, peoples r china;csun@imr.ac.cn
关键词Filtered Arc Ion Plating Aluminum Nitride Thin Films Microstructure Deposition Rate Transmittance Growth Aln
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WOS记录号WOS:000278148900006
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被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/31625
专题中国科学院金属研究所
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X. B. Yan,Y. L. Dong,H. Q. Li,et al. Synthesis of aluminum nitride thin films by filtered arc ion plating deposition[J]. Materials Letters,2010,64(11):1261-1263.
APA X. B. Yan,Y. L. Dong,H. Q. Li,J. Gong,&C. Sun.(2010).Synthesis of aluminum nitride thin films by filtered arc ion plating deposition.Materials Letters,64(11),1261-1263.
MLA X. B. Yan,et al."Synthesis of aluminum nitride thin films by filtered arc ion plating deposition".Materials Letters 64.11(2010):1261-1263.
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