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Unipolar resistive switching effect in YMn(1-delta)O(3) thin films
Z. B. Yan; S. Z. Li; K. F. Wang; J. M. Liu
2010
发表期刊Applied Physics Letters
ISSN0003-6951
卷号96期号:1
摘要Steady unipolar resistive switching of Pt/YMn(1-delta)O(3)/Pt MIM structure is investigated. High resistance ratio (>10(4)) of high resistance state (HRS) over low resistance state (LRS) and long retention (>10(5) s) are achieved. It is suggested that the Joule heating and Poole-Frenkel effect dominate respectively the conduction of the LRS and HRS in high electric field region. The resistive switching is explained by the rupture and formation of conductive filaments in association with the local Joule-heat-induced redox inside YMn(1-delta)O(3).
部门归属[yan, z. b.] nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;yan, zb (reprint author), nanjing univ, nanjing natl lab microstruct, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词Electric Resistance Ferroelectric Materials Ferroelectric Switching Fracture Insulating Thin Films Mim Structures Platinum Poole-frenkel Effect Yttrium Compounds
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/31627
专题中国科学院金属研究所
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GB/T 7714
Z. B. Yan,S. Z. Li,K. F. Wang,et al. Unipolar resistive switching effect in YMn(1-delta)O(3) thin films[J]. Applied Physics Letters,2010,96(1).
APA Z. B. Yan,S. Z. Li,K. F. Wang,&J. M. Liu.(2010).Unipolar resistive switching effect in YMn(1-delta)O(3) thin films.Applied Physics Letters,96(1).
MLA Z. B. Yan,et al."Unipolar resistive switching effect in YMn(1-delta)O(3) thin films".Applied Physics Letters 96.1(2010).
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