Photoconductive semiconductor switch based on ZnS nanobelts film | |
X. J. Zheng; Y. Q. Chen; T. Zhang; B. Yang; C. B. Jiang; B. Yuan; Z. Zhu | |
2010 | |
发表期刊 | Sensors and Actuators B-Chemical
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ISSN | 0925-4005 |
卷号 | 147期号:2页码:442-446 |
摘要 | Photoconductive semiconductor switch (PCSS) based on ZnS nanobelts film was fabricated and applied into a test circuit to control the circuit state under illumination of ultraviolet (UV) lights with four wavelengths of 280, 300, 320 and 340 nm. The current-voltage curves show that PCSS based on ZnS nanobelts film is of low leakage current (similar to 10(-8) A) and high photosensitivity (10(4)), and the response time spectra show that the state conversion between "1" and "0" is obviously corresponding to UV illumination "on" and "off". The PCSS based on ZnS nanobelts film is of fast response (typical rise time 0.07 s and decay time 0.05 s) and high voltage response (12 V). The photoconductive properties are regarded to be consequences of longer transport path and higher surface to volume ratio according to oxygen chemisorption mechanism. The results indicate that the PCSS based on ZnS nanobelts film is a promising candidate for future integration of PCSS. (C) 2010 Elsevier B.V. All rights reserved. |
部门归属 | [zheng, x. j.; chen, y. q.; yang, b.; yuan, b.; zhu, z.] xiangtan univ, minist educ, key lab low dimens mat & applicat technol, xiangtan 411105, hunan, peoples r china. [zheng, x. j.; chen, y. q.; yang, b.; yuan, b.; zhu, z.] xiangtan univ, fac mat optoelect & phys, xiangtan 411105, hunan, peoples r china. [zhang, t.] jilin univ, state key lab integrated optoelect, coll elect sci & engn, changchun 130012, jilin, peoples r china. [jiang, c. b.] inst met sci & technol, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china.;zheng, xj (reprint author), xiangtan univ, minist educ, key lab low dimens mat & applicat technol, xiangtan 411105, hunan, peoples r china;zhengxuejun@xtu.edu.cn |
关键词 | Zns Nanobelts Photoconductive Semiconductor Switch Uv-light Oxide |
URL | 查看原文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/31767 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | X. J. Zheng,Y. Q. Chen,T. Zhang,et al. Photoconductive semiconductor switch based on ZnS nanobelts film[J]. Sensors and Actuators B-Chemical,2010,147(2):442-446. |
APA | X. J. Zheng.,Y. Q. Chen.,T. Zhang.,B. Yang.,C. B. Jiang.,...&Z. Zhu.(2010).Photoconductive semiconductor switch based on ZnS nanobelts film.Sensors and Actuators B-Chemical,147(2),442-446. |
MLA | X. J. Zheng,et al."Photoconductive semiconductor switch based on ZnS nanobelts film".Sensors and Actuators B-Chemical 147.2(2010):442-446. |
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