Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar

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	Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar
	H. Cheng; A. M. Wu; J. Q. Xiao; N. L. Shi; L. S. Wen
	2009
发表期刊	Journal of Materials Science & Technology
ISSN	1005-0302
卷号	25 期号:4 页码:489-491
摘要	Polycrystalline silicon (poly-Si) films were deposited using Ar diluted SiH(4) gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on deposition rate, crystallinity, grain size and the configuration of H existing in poly-Si film were investigated. The results show that, comparing with H(2) dilution, Ar dilution could significantly decrease the concentration of H on the growing surface. When the substrate temperature increased, the deposition rate increased and the concentration of H decreased monotonously, but the crystallinity and the grain size of poly-Si films exhibited sophisticated trends. It is proposed that the crystallinity of the films is determined by a competing balance of the self-diffusion activity of Si atoms and the deposition rate. At substrate temperature of 200 degrees C, the deposited film exhibits the maximum poly-Si volume fraction of 79%. Based on these results, higher substrate temperature is suggested to prepare the poly-Si films with advanced stability and compromised crystallinity at high deposition rate.
部门归属	[wu, aimin] dalian univ technol, dalian 116024, peoples r china. [cheng, hua; xiao, jinquan; shi, nanlin; wen, lishi] chinese acad sci, inst met res, shenyang 110016, peoples r china. [cheng, hua] pla, armor tech inst, changchun 130117, peoples r china.;wu, am (reprint author), dalian univ technol, dalian 116024, peoples r china;aimin@dlut.edu.cn wen_lishi@163.com
关键词	Poly-si Films Ecr-pecvd Substrate Temperature Ar-dilution Chemical-vapor-deposition Ar-diluted Sih4 Microcrystalline Silicon Optical-properties h Films Plasma Pecvd Hydrogen Silane
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31846
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. Cheng,A. M. Wu,J. Q. Xiao,et al. Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar[J]. Journal of Materials Science & Technology,2009,25(4):489-491.
APA	H. Cheng,A. M. Wu,J. Q. Xiao,N. L. Shi,&L. S. Wen.(2009).Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar.Journal of Materials Science & Technology,25(4),489-491.
MLA	H. Cheng,et al."Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar".Journal of Materials Science & Technology 25.4(2009):489-491.