Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature

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	Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature
	C. J. Dong; M. Xu; Q. Y. Chen; F. S. Liu; H. P. Zhou; Y. Wei; H. X. Ji
	2009
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	479 期号:1-2 页码:812-815
摘要	Al(x)In(1-x)N films with an AlN buffer were deposited on different substrates (including Si(1 1 1), sapphire, and glass) by radio-frequency (RF) magnetron sputtering at a low temperature of 300 degrees C. The morphology and structure analysis revealed that the Al(x)In(1-x)N films grown on Si(1 1 1) and sapphire are of high orientation and good crystallinity with a bandgap energy (E(g)) of less than 2.41 eV. The sheet resistance of Al(x)In(1-x)N film grown on Si(1 1 1) and sapphire is approximately 40 Omega/square. These results are highly relevant to the development of effective nitride photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved.
部门归属	[dong, c. j.; xu, m.; chen, q. y.; zhou, h. p.; wei, y.; ji, h. x.] sichuan normal univ, inst solid state phys, lab low dimens struct phys, chengdu 610068, peoples r china. [xu, m.] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. [liu, f. s.] panzhihua univ, res ctr v ti mat, panzhihua 617000, peoples r china.;xu, m (reprint author), sichuan normal univ, inst solid state phys, lab low dimens struct phys, chengdu 610068, peoples r china;hsuming_2001@yahoo.com.cn
关键词	Al(x)In(1-x)n Film Magnetron Sputtering Crystallinity Resistance Molecular-beam Epitaxy Fundamental-band Gap Vapor-phase Epitaxy Optical-properties Energy Alinn Inn Aln Nanowires Inxal1-xn
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文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31868
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	C. J. Dong,M. Xu,Q. Y. Chen,et al. Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature[J]. Journal of Alloys and Compounds,2009,479(1-2):812-815.
APA	C. J. Dong.,M. Xu.,Q. Y. Chen.,F. S. Liu.,H. P. Zhou.,...&H. X. Ji.(2009).Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature.Journal of Alloys and Compounds,479(1-2),812-815.
MLA	C. J. Dong,et al."Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature".Journal of Alloys and Compounds 479.1-2(2009):812-815.