Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition

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	Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition
	Y. He; J. Z. Zhang; W. Q. Yao; D. X. Li; X. Teng
	2009
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	255 期号:8 页码:4484-4490
摘要	Ti films with a thickness of 1.6 mu m (group A) and 4.6 mu m (group B) were prepared on surface of silicon crystal by metal vapor vacuum arc (MEVVA) ion implantation combined with ion beam assisted deposition (IBAD). Different anneal temperatures ranging from 100 to 500 degrees C were used to investigate effect of temperature on residual stress and mechanical properties of the Ti films. X-ray diffraction (XRD) was used to measure residual stress of the Ti films. The morphology, depth pro. le, roughness, nanohardness, and modulus of the Ti films were measured by scanning electron microscopy (SEM), scanning Auger nanoprobe (SAN), atomic force microscopy (AFM), and nanoindentation, respectively. The experimental results suggest that residual stress was sensitive to film thickness and anneal temperature. The critical temperatures of the sample groups A and B that residual stress changed from compressive to tensile were 404 and 428 degrees C, respectively. The mean surface roughness and grain size of the annealed Ti films increased with increasing anneal temperature. The values of nanohardness and modulus of the Ti films reached their maximum values near the surface, then, reached corresponding values with increasing depth of the indentation. The mechanism of stress relaxation of the Ti films is discussed in terms of re-crystallization and difference of coefficient of thermal expansion between Ti film and Si substrate. (C) 2008 Elsevier B. V. All rights reserved.
部门归属	[he, yue; zhang, jizhong; li, dexing; teng, xu] tsinghua univ, dept mat sci & engn, adv mat lab, beijing 100084, peoples r china. [zhang, jizhong] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. [yao, wenqing] tsinghua univ, anal ctr, beijing 100084, peoples r china.;zhang, jz (reprint author), tsinghua univ, dept mat sci & engn, adv mat lab, beijing 100084, peoples r china,peoples r china;zjz@mail.tsinghua.edu.cn
关键词	Titanium Residual Stress Mevva Ibad Nanohardness Xrd Shape-memory Alloy Tribological Properties Silicon Relaxation Aluminum Behavior
URL	查看原文
WOS记录号	WOS:000262695200024
引用统计	被引频次：18[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31965
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. He,J. Z. Zhang,W. Q. Yao,et al. Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition[J]. Applied Surface Science,2009,255(8):4484-4490.
APA	Y. He,J. Z. Zhang,W. Q. Yao,D. X. Li,&X. Teng.(2009).Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition.Applied Surface Science,255(8),4484-4490.
MLA	Y. He,et al."Effect of temperature on residual stress and mechanical properties of Ti films prepared by both ion implantation and ion beam assisted deposition".Applied Surface Science 255.8(2009):4484-4490.