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Crystal Structure and Electronic Structure of a Novel Hf(3)AlN Ceramic
F. Z. Li; C. F. Hu; J. M. Wang; B. Liu; J. Y. Wang; Y. C. Zhou
2009
发表期刊Journal of the American Ceramic Society
ISSN0002-7820
卷号92期号:2页码:476-480
摘要In this work, we have fabricated a novel ternary aluminum nitride, Hf(3)AlN, via a reactive hot pressing method using hafnium and aluminum nitride as starting materials. The crystal structure of Hf(3)AlN was established by a combination of ab initio calculation, X-ray diffraction, and electron diffraction analyses. The point group and space group of Hf(3)AlN were determined as mmm and Cmcm, respectively. The lattice constants are a=0.3298 nm, b=1.135 nm, c=0.8842 nm and the atomic positions are Hf1 at 4c (0, 0.0441, 0.2500), Hf2 at 8f (0, 0.3701, 0.0437), Al at 4c (0, 0.7469, 0.2500), and N at 4a (0, 0, 0). Electronic structure analysis demonstrated that Hf(3)AlN should possess metallic conductivity and intrinsic damage tolerance. We hope that this work will inspire future experimental research on this Hf-based ternary ceramic.
部门归属[li, fangzhi; hu, chunfeng; wang, jiemin; liu, bin; wang, jingyang; zhou, yanchun] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [li, fangzhi; hu, chunfeng; wang, jiemin; liu, bin] chinese acad sci, grad sch, beijing 100039, peoples r china.;zhou, yc (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;yczhou@imr.ac.cn
关键词Magnetron Sputtering Method Fusion-reactor Materials Zr-al-n Films Oxidation Hafnium
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/32016
专题中国科学院金属研究所
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F. Z. Li,C. F. Hu,J. M. Wang,et al. Crystal Structure and Electronic Structure of a Novel Hf(3)AlN Ceramic[J]. Journal of the American Ceramic Society,2009,92(2):476-480.
APA F. Z. Li,C. F. Hu,J. M. Wang,B. Liu,J. Y. Wang,&Y. C. Zhou.(2009).Crystal Structure and Electronic Structure of a Novel Hf(3)AlN Ceramic.Journal of the American Ceramic Society,92(2),476-480.
MLA F. Z. Li,et al."Crystal Structure and Electronic Structure of a Novel Hf(3)AlN Ceramic".Journal of the American Ceramic Society 92.2(2009):476-480.
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