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Bismuth redistribution induced by intermetallic compound growth in SnBi/Cu microelectronic interconnect
C. Liu; W. Zhang
2009
发表期刊Journal of Materials Science
ISSN0022-2461
卷号44期号:1页码:149-153
摘要It was found that Bi particles, with a diameter of 100 nm, precipitated along Cu(3)Sn/Cu interface and Bi crystallites dispersed in Cu(3)Sn layer in 42Sn58Bi/Cu microelectronic interconnect, when it was aged at 120 A degrees C for 7 days. The mechanism for Bi redistribution like this was discussed. Cu(6)Sn(5) turned into Cu(3)Sn by Cu diffusion that is dominant in Sn/Cu inter-diffusion during the aging process. Bi precipitation occurred in Cu(3)Sn due to lower Bi solubility in Cu(3)Sn than that in Cu(6)Sn(5). The Bi precipitates can traverse the formed Cu(3)Sn quickly toward the Cu(3)Sn/Cu interface, attributed to the Kirkendall effect. They stayed and nucleated there to form particles, owing to their unwettability on Cu. The formed Cu(3)Sn got oversaturated with Bi, when the joint cooled from 120 A degrees C to room temperature. Then Bi crystallites precipitated dispersedly in Cu(3)Sn layer.
部门归属[liu, c. z.] shenyang inst aeronaut engn, shenyang 110136, peoples r china. [liu, c. z.; zhang, w.] chinese acad sci, inst met res, shenyang 110016, peoples r china.;liu, c (reprint author), shenyang inst aeronaut engn, shenyang 110136, peoples r china;chunzliu@yahoo.com phdweizhang@gmail.com
关键词Lead-free Solders Interfacial Reactions Copper Segregation Embrittlement
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WOS记录号WOS:000262402200015
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被引频次:32[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/32068
专题中国科学院金属研究所
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C. Liu,W. Zhang. Bismuth redistribution induced by intermetallic compound growth in SnBi/Cu microelectronic interconnect[J]. Journal of Materials Science,2009,44(1):149-153.
APA C. Liu,&W. Zhang.(2009).Bismuth redistribution induced by intermetallic compound growth in SnBi/Cu microelectronic interconnect.Journal of Materials Science,44(1),149-153.
MLA C. Liu,et al."Bismuth redistribution induced by intermetallic compound growth in SnBi/Cu microelectronic interconnect".Journal of Materials Science 44.1(2009):149-153.
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