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Semiconducting properties of cup-stacked carbon nanotubes
Q. F. Liu; W. C. Ren; Z. G. Chen; L. C. Yin; F. Li; H. T. Cong; H. M. Cheng
2009
发表期刊Carbon
ISSN0008-6223
卷号47期号:3页码:731-736
摘要The current-voltage characteristics of individual cup-stacked carbon nanotubes (CSCNTs) were investigated in situ inside the transmission electron microscope. Different from other quasi-ID carbon structures such as multi-walled carbon nanotubes, carbon nanofibers or graphitic fibers that normally behave as a metallic conductor of electrons, individual CSCNTs were found to exhibit unexpectedly semiconducting behaviors due to the special stacking microstructure of graphene layers. The band gap of the CSCNTs was obtained with the value of about 0.44 eV, in contrast to the zero-gap semiconducting quasi-2D graphene. These findings provide new information about the effect of the stacking graphene layers on their electronic properties, and will widen the usefulness of such stacking structure for the application in nanoelectronics. (C) 2008 Elsevier Ltd. All rights reserved.
部门归属[liu, qingfeng; ren, wencai; chen, zhi-gang; yin, lichang; li, feng; cong, hongtao; cheng, hui-ming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;cheng, hm (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;cheng@imr.ac.cn
关键词Nanoparticles Transparent Fabrication Nanofibers Pyrolysis Diameter Diodes Field Step Size
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WOS记录号WOS:000263623400023
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被引频次:47[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/32104
专题中国科学院金属研究所
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Q. F. Liu,W. C. Ren,Z. G. Chen,et al. Semiconducting properties of cup-stacked carbon nanotubes[J]. Carbon,2009,47(3):731-736.
APA Q. F. Liu.,W. C. Ren.,Z. G. Chen.,L. C. Yin.,F. Li.,...&H. M. Cheng.(2009).Semiconducting properties of cup-stacked carbon nanotubes.Carbon,47(3),731-736.
MLA Q. F. Liu,et al."Semiconducting properties of cup-stacked carbon nanotubes".Carbon 47.3(2009):731-736.
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