Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers

IMR OpenIR

	Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers; Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers
	M. Wang; B. Zhang; G. P. Zhang; Q. Y. Yu; C. S. Liu
	2009 ; 2009
发表期刊	Journal of Materials Science & Technology ; Journal of Materials Science & Technology
ISSN	1005-0302 ; 1005-0302
卷号	25 期号:5 页码:699-702
摘要	The electrical resistivity of Cu/Ta multilayers deposited by radio-frequency magnetron sputtering on a polyimide substrate was investigated as a function of monolayer thickness It is found that the resistivity of the multilayer increases with decreasing monolayer thickness from 500 nm to 10 nm Two significant effects of layer interface scattering and grain boundary scattering were identified to dominate electronic transportation behavior in the Cu/Ta multilayers at different length scales The electrical resistivity of the multilayer with monolayer thickness ranging from nanometer to submicron scales can be well described by a newly-proposed Fuchs-Sandheimair (F-S) and Mayadas-Shatzkes (M-S) combined model; The electrical resistivity of Cu/Ta multilayers deposited by radio-frequency magnetron sputtering on a polyimide substrate was investigated as a function of monolayer thickness It is found that the resistivity of the multilayer increases with decreasing monolayer thickness from 500 nm to 10 nm Two significant effects of layer interface scattering and grain boundary scattering were identified to dominate electronic transportation behavior in the Cu/Ta multilayers at different length scales The electrical resistivity of the multilayer with monolayer thickness ranging from nanometer to submicron scales can be well described by a newly-proposed Fuchs-Sandheimair (F-S) and Mayadas-Shatzkes (M-S) combined model
部门归属	[wang, m.; zhang, g. p.; yu, q. y.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [wang, m.; zhang, b.; yu, q. y.; liu, c. s.] northeastern univ, sch met & mat, minist educ, key lab amsotropy & texture mat, shenyang 110004, peoples r china.;zhang, gp (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china ; [wang, m.; zhang, g. p.; yu, q. y.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [wang, m.; zhang, b.; yu, q. y.; liu, c. s.] northeastern univ, sch met & mat, minist educ, key lab amsotropy & texture mat, shenyang 110004, peoples r china.;zhang, gp (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china
关键词	Electrical Resistivity Electrical Resistivity Multilayer Multilayer Interface Interface Grain Boundary Grain Boundary Scattering Scattering Length Scale Length Scale Thin Copper-films Thin Copper-films Polycrystalline Films Polycrystalline Films Transport-properties Transport-properties External External Surfaces Surfaces Metallic-films Metallic-films Scattering Scattering Superlattices Superlattices Reflection Reflection Dependence Dependence Behavior Behavior
URL	查看原文 ; 查看原文
WOS记录号	WOS:000271113600025 ; WOS:000271113600025
引用统计	被引频次：27[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32366
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	M. Wang,B. Zhang,G. P. Zhang,et al. Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers, Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers[J]. Journal of Materials Science & Technology, Journal of Materials Science & Technology,2009, 2009,25, 25(5):699-702, 699-702.
APA	M. Wang,B. Zhang,G. P. Zhang,Q. Y. Yu,&C. S. Liu.(2009).Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers.Journal of Materials Science & Technology,25(5),699-702.
MLA	M. Wang,et al."Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers".Journal of Materials Science & Technology 25.5(2009):699-702.