Amplification of magnetoresistance and Hall effect of Fe(3)O(4)-SiO(2)-Si structure

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	Amplification of magnetoresistance and Hall effect of Fe(3)O(4)-SiO(2)-Si structure
	X. J. Wang; Y. Sui; J. K. Tang; Y. Li; X. Q. Zhang; C. Wang; Z. G. Liu; W. H. Su
	2009
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	105 期号:7
摘要	In this paper, we report the magnetoresistance and the Hall effect in the Fe(3)O(4)-SiO(2)-Si structure. Single phase magnetite films were deposited on n-type silicon substrates using laser molecular beam epitaxy. When the temperature is increased beyond 230 K, the resistance drops rapidly because the conduction path starts to switch from the Fe(3)O(4) film to the inversion layer underneath the native SiO(2) via thermally assisted tunneling. A large negative magnetoresistance is observed at about 230 K, and this maximum shifts to higher temperature with increasing film thickness. Hall effect data of the structure show that the carriers are holes above the channel switching temperature. Our results confirm that the large magnetoresistance at similar to 230 K originates from the amplification of the magnetoresistance of the magnetite in the Fe(3)O(4)-SiO(2)-Si structure. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3065987]
部门归属	[wang, xianjie; sui, yu; zhang, xingquan; wang, cong; liu, zhiguo; su, wenhui] harbin inst technol, ccmst, dept phys, harbin 150001, peoples r china. [wang, xianjie; tang, jinke] univ wyoming, dept phys & astron, laramie, wy 82071 usa. [sui, yu; su, wenhui] acad sinica, int ctr mat phys, shenyang 110015, peoples r china. [li, yao] harbin inst technol, ctr composite mat, harbin 150001, peoples r china.;sui, y (reprint author), harbin inst technol, ccmst, dept phys, harbin 150001, peoples r china;suiyu@hit.edu.cn
关键词	Tunnel-junctions Films Magnetotransport Transition Magnetite Silicon Si
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32387
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. J. Wang,Y. Sui,J. K. Tang,et al. Amplification of magnetoresistance and Hall effect of Fe(3)O(4)-SiO(2)-Si structure[J]. Journal of Applied Physics,2009,105(7).
APA	X. J. Wang.,Y. Sui.,J. K. Tang.,Y. Li.,X. Q. Zhang.,...&W. H. Su.(2009).Amplification of magnetoresistance and Hall effect of Fe(3)O(4)-SiO(2)-Si structure.Journal of Applied Physics,105(7).
MLA	X. J. Wang,et al."Amplification of magnetoresistance and Hall effect of Fe(3)O(4)-SiO(2)-Si structure".Journal of Applied Physics 105.7(2009).