| Effects of the transverse Ising model parameters on the polarizations of multi-surface ferroelectric thin films |
| Y. Xiong; K. Xiao-Yu
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| 2009
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发表期刊 | Solid State Communications
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ISSN | 0038-1098
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卷号 | 149期号:33-34页码:1373-1378 |
摘要 | The layer polarizations and average polarizations of multi-surface ferroelectric thin films described by the transverse Ising model (TIM) have been studied within the framework of a Green's function technique. The effects of the exchange interactions and transverse field parameters on the polarizations are discussed systemically. By performing a higher-order decoupling to the Fermi-type Green's functions, the numerical results beyond those of the usual mean-field approximation are obtained. It is shown that the larger the exchange interaction, the larger the layer polarization and the average polarization; the larger the transverse field, the smaller the polarization. (C) 2009 Elsevier Ltd. All rights reserved. |
部门归属 | [xiong, yang] civil aviat univ china, coll sci, tianjin 300300, peoples r china. [xiao-yu, kuang] sichuan univ, inst atom & mol phys, chengdu 610065, peoples r china. [xiao-yu, kuang] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;xiong, y (reprint author), civil aviat univ china, coll sci, tianjin 300300, peoples r china;yxxy1224@163.com scu_kxy@163.com
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关键词 | Ferroelectric Thin Films
Green's Function Technique
Polarization
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URL | 查看原文
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WOS记录号 | WOS:000268748200015
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引用统计 |
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文献类型 | 期刊论文
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条目标识符 | http://ir.imr.ac.cn/handle/321006/32454
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专题 | 中国科学院金属研究所
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推荐引用方式 GB/T 7714 |
Y. Xiong,K. Xiao-Yu. Effects of the transverse Ising model parameters on the polarizations of multi-surface ferroelectric thin films[J]. Solid State Communications,2009,149(33-34):1373-1378.
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APA |
Y. Xiong,&K. Xiao-Yu.(2009).Effects of the transverse Ising model parameters on the polarizations of multi-surface ferroelectric thin films.Solid State Communications,149(33-34),1373-1378.
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MLA |
Y. Xiong,et al."Effects of the transverse Ising model parameters on the polarizations of multi-surface ferroelectric thin films".Solid State Communications 149.33-34(2009):1373-1378.
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